APA (7th ed.) Citation

Kagawa, R., Ohno, Y., Nagai, Y., Shigekawa, N., & Liang, J. (2024). Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth. Taylor & Francis Group.

Chicago Style (17th ed.) Citation

Kagawa, Ryo, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang. Fabrication of Low Thermal Resistance 3C-SiC/diamond Structure for GaN Epitaxial Layer Growth. Taylor & Francis Group, 2024.

MLA (9th ed.) Citation

Kagawa, Ryo, et al. Fabrication of Low Thermal Resistance 3C-SiC/diamond Structure for GaN Epitaxial Layer Growth. Taylor & Francis Group, 2024.