Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth
Integrating diamonds with GaN presents a promising solution for enhancing heat dissipation. However, a critical challenge lies in developing an engineering substrate that facilitates the growth of high-quality GaN epitaxial layers, enabling the production of GaN-based devices with superior thermal m...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2024-12-01
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| Series: | Functional Diamond |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/26941112.2024.2337352 |
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