ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD
Recently carbon-doped epitaxial layers become more attractive in most practical applications. In this paper we have considered the mechanisms of etching of CCl<sub>4</sub>-doped GaAs grown by MOCVD in the temperature range of 600–800°C. It has been shown that, as temperat...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
MIREA - Russian Technological University
2013-08-01
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| Series: | Тонкие химические технологии |
| Subjects: | |
| Online Access: | https://www.finechem-mirea.ru/jour/article/view/574 |
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