Amorphous GaN matrix embedded nanocrystals exhibiting bulk bandgap luminescence
This work reports on the room temperature sputtering growth of gallium nitride thin films, exhibiting band edge luminescence without thermal annealing or post-deposition processing. In particular, we investigate and correlate their luminescence spectra with their structural properties (amorphous or...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0253319 |
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