Transmission Electron Microscopy to Study Gallium Nitride Transistors Grown on Sapphire and Silicon Substrates

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Transmission Electron Microscopy to Study Gallium Nitride Transistors Grown on Sapphire and Silicon Substrates

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Bibliografische gegevens
Hoofdauteurs:	Selvaraj, S. Lawrence, Egawa, Takashi
Formaat:	Elektronisch Hoofdstuk
Taal:	Engels
Gepubliceerd in:	IntechOpen 2012
Onderwerpen:	Physical Sciences, Engineering and Technology
Online toegang:	https://www.intechopen.com/chapters/34879
Tags:	Voeg label toe Geen labels, Wees de eerste die dit record labelt!

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