Transmission Electron Microscopy to Study Gallium Nitride Transistors Grown on Sapphire and Silicon Substrates

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Transmission Electron Microscopy to Study Gallium Nitride Transistors Grown on Sapphire and Silicon Substrates

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Dettagli Bibliografici
Autori principali:	Selvaraj, S. Lawrence, Egawa, Takashi
Natura:	Elettronico Capitolo di libro
Lingua:	inglese
Pubblicazione:	IntechOpen 2012
Soggetti:	Physical Sciences, Engineering and Technology
Accesso online:	https://www.intechopen.com/chapters/34879
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

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