The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si

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The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si

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Bibliographic Details
Main Authors:	Nussupov, Kair Kh., Beisenkhanov, Nurzhan B.
Format:	Electronic Book Chapter
Language:	English
Published:	IntechOpen 2011
Subjects:	Physical Sciences, Engineering and Technology
Online Access:	https://www.intechopen.com/chapters/21140
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