The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si
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| Main Authors: | , |
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| Format: | Electronic Book Chapter |
| Language: | English |
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IntechOpen
2011
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| Online Access: | https://www.intechopen.com/chapters/21140 |
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| _version_ | 1839562584547655680 |
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| author | Nussupov, Kair Kh. Beisenkhanov, Nurzhan B. |
| author_facet | Nussupov, Kair Kh. Beisenkhanov, Nurzhan B. |
| author_sort | Nussupov, Kair Kh. |
| collection | InTech Open eBooks |
| description | None |
| doi_str_mv | 10.5772/22256 |
| first_indexed | 2025-08-04T21:39:50Z |
| format | Electronic Book Chapter |
| fullrecord | <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><identifier>InTech-21140</identifier><datestamp>2011-10-10</datestamp>
<dc:title>The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si</dc:title>
<dc:creator>Kair Kh. Nussupov</dc:creator>
<dc:creator>Nurzhan B. Beisenkhanov</dc:creator>
<dc:subject>Physical Sciences, Engineering and Technology</dc:subject>
<dc:description>None</dc:description>
<dc:publisher>IntechOpen</dc:publisher>
<dc:date>2011-10-10</dc:date>
<dc:type>Chapter, Part Of Book</dc:type>
<dc:identifier>https://www.intechopen.com/chapters/21140</dc:identifier>
<dc:identifier>doi:10.5772/22256</dc:identifier>
<dc:language>en</dc:language>
<dc:relation>ISBN:978-953-307-968-4</dc:relation>
<dc:rights>https://creativecommons.org/licenses/by/3.0/</dc:rights>
<dc:source>https://www.intechopen.com/books/326 ; Silicon Carbide - Materials, Processing and Applications in Electronic Devices</dc:source>
</oai_dc:dc> |
| id | InTech-21140 |
| institution | Matheson Library |
| isbn | 978-953-307-968-4 |
| language | English |
| last_indexed | 2025-08-04T21:39:50Z |
| publishDate | 2011 |
| publisher | IntechOpen |
| record_format | intech |
| spelling | InTech-211402011-10-10 The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si Kair Kh. Nussupov Nurzhan B. Beisenkhanov Physical Sciences, Engineering and Technology None IntechOpen 2011-10-10 Chapter, Part Of Book https://www.intechopen.com/chapters/21140 doi:10.5772/22256 en ISBN:978-953-307-968-4 https://creativecommons.org/licenses/by/3.0/ https://www.intechopen.com/books/326 ; Silicon Carbide - Materials, Processing and Applications in Electronic Devices |
| spellingShingle | Physical Sciences, Engineering and Technology Nussupov, Kair Kh. Beisenkhanov, Nurzhan B. The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si |
| title | The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si |
| title_full | The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si |
| title_fullStr | The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si |
| title_full_unstemmed | The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si |
| title_short | The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si |
| title_sort | formation of silicon carbide in the sicx layers x 0 03 1 4 formed by multiple implantation of c ions in si |
| topic | Physical Sciences, Engineering and Technology |
| url | https://www.intechopen.com/chapters/21140 |
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