Nussupov, K. K., & Beisenkhanov, N. B. (2011). The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si. IntechOpen. https://doi.org/10.5772/22256
Chicago Style (17th ed.) CitationNussupov, Kair Kh., and Nurzhan B. Beisenkhanov. The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si. IntechOpen, 2011. https://doi.org/10.5772/22256.
MLA (9th ed.) CitationNussupov, Kair Kh., and Nurzhan B. Beisenkhanov. The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si. IntechOpen, 2011. https://doi.org/10.5772/22256.
Warning: These citations may not always be 100% accurate.