Effect of Native Oxide on the Electric Field-induced Characteristics of Device-quality Silicon at Room Temperature

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Main Authors: Khlyap, Halyna, Laptev, Viktor, Pankiv, Luydmila, Tsmots, Volodymyr
Format: Electronic Book Chapter
Language:English
Published: IntechOpen 2011
Subjects:
Online Access:https://www.intechopen.com/chapters/17723
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author Khlyap, Halyna
Laptev, Viktor
Pankiv, Luydmila
Tsmots, Volodymyr
author_facet Khlyap, Halyna
Laptev, Viktor
Pankiv, Luydmila
Tsmots, Volodymyr
author_sort Khlyap, Halyna
collection InTech Open eBooks
description None
doi_str_mv 10.5772/22481
first_indexed 2025-08-04T21:39:23Z
format Electronic
Book Chapter
fullrecord <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><identifier>InTech-17723</identifier><datestamp>2011-07-27</datestamp> <dc:title>Effect of Native Oxide on the Electric Field-induced Characteristics of Device-quality Silicon at Room Temperature</dc:title> <dc:creator>Halyna Khlyap</dc:creator> <dc:creator>Viktor Laptev</dc:creator> <dc:creator>Luydmila Pankiv</dc:creator> <dc:creator>Volodymyr Tsmots</dc:creator> <dc:subject>Physical Sciences, Engineering and Technology</dc:subject> <dc:description>None</dc:description> <dc:publisher>IntechOpen</dc:publisher> <dc:date>2011-07-27</dc:date> <dc:type>Chapter, Part Of Book</dc:type> <dc:identifier>https://www.intechopen.com/chapters/17723</dc:identifier> <dc:identifier>doi:10.5772/22481</dc:identifier> <dc:language>en</dc:language> <dc:relation>ISBN:978-953-307-587-7</dc:relation> <dc:rights>https://creativecommons.org/licenses/by-nc-sa/3.0/</dc:rights> <dc:source>https://www.intechopen.com/books/332 ; Crystalline Silicon - Properties and Uses</dc:source> </oai_dc:dc>
id InTech-17723
institution Matheson Library
isbn 978-953-307-587-7
language English
last_indexed 2025-08-04T21:39:23Z
publishDate 2011
publisher IntechOpen
record_format intech
spelling InTech-177232011-07-27 Effect of Native Oxide on the Electric Field-induced Characteristics of Device-quality Silicon at Room Temperature Halyna Khlyap Viktor Laptev Luydmila Pankiv Volodymyr Tsmots Physical Sciences, Engineering and Technology None IntechOpen 2011-07-27 Chapter, Part Of Book https://www.intechopen.com/chapters/17723 doi:10.5772/22481 en ISBN:978-953-307-587-7 https://creativecommons.org/licenses/by-nc-sa/3.0/ https://www.intechopen.com/books/332 ; Crystalline Silicon - Properties and Uses
spellingShingle Physical Sciences, Engineering and Technology
Khlyap, Halyna
Laptev, Viktor
Pankiv, Luydmila
Tsmots, Volodymyr
Effect of Native Oxide on the Electric Field-induced Characteristics of Device-quality Silicon at Room Temperature
title Effect of Native Oxide on the Electric Field-induced Characteristics of Device-quality Silicon at Room Temperature
title_full Effect of Native Oxide on the Electric Field-induced Characteristics of Device-quality Silicon at Room Temperature
title_fullStr Effect of Native Oxide on the Electric Field-induced Characteristics of Device-quality Silicon at Room Temperature
title_full_unstemmed Effect of Native Oxide on the Electric Field-induced Characteristics of Device-quality Silicon at Room Temperature
title_short Effect of Native Oxide on the Electric Field-induced Characteristics of Device-quality Silicon at Room Temperature
title_sort effect of native oxide on the electric field induced characteristics of device quality silicon at room temperature
topic Physical Sciences, Engineering and Technology
url https://www.intechopen.com/chapters/17723
work_keys_str_mv AT khlyaphalyna effectofnativeoxideontheelectricfieldinducedcharacteristicsofdevicequalitysiliconatroomtemperature
AT laptevviktor effectofnativeoxideontheelectricfieldinducedcharacteristicsofdevicequalitysiliconatroomtemperature
AT pankivluydmila effectofnativeoxideontheelectricfieldinducedcharacteristicsofdevicequalitysiliconatroomtemperature
AT tsmotsvolodymyr effectofnativeoxideontheelectricfieldinducedcharacteristicsofdevicequalitysiliconatroomtemperature