Khlyap, H., Laptev, V., Pankiv, L., & Tsmots, V. (2011). Effect of Native Oxide on the Electric Field-induced Characteristics of Device-quality Silicon at Room Temperature. IntechOpen. https://doi.org/10.5772/22481
Chicago Style (17th ed.) CitationKhlyap, Halyna, Viktor Laptev, Luydmila Pankiv, and Volodymyr Tsmots. Effect of Native Oxide on the Electric Field-induced Characteristics of Device-quality Silicon at Room Temperature. IntechOpen, 2011. https://doi.org/10.5772/22481.
MLA (9th ed.) CitationKhlyap, Halyna, et al. Effect of Native Oxide on the Electric Field-induced Characteristics of Device-quality Silicon at Room Temperature. IntechOpen, 2011. https://doi.org/10.5772/22481.
Warning: These citations may not always be 100% accurate.