Jaud, M., Barraud, S., Dollfus, P., Saint-Martin, J., Bournel, A., & Jaouen, H. (2011). A Pearson Effective Potential for Monte-Carlo Simulation of Quantum Confinement Effects in nMOSFETs. IntechOpen. https://doi.org/10.5772/15942
Chicago Style (17th ed.) CitationJaud, Marie-Anne, Sylvain Barraud, Philippe Dollfus, Jérôme Saint-Martin, Arnaud Bournel, and Hervé Jaouen. A Pearson Effective Potential for Monte-Carlo Simulation of Quantum Confinement Effects in NMOSFETs. IntechOpen, 2011. https://doi.org/10.5772/15942.
MLA (9th ed.) CitationJaud, Marie-Anne, et al. A Pearson Effective Potential for Monte-Carlo Simulation of Quantum Confinement Effects in NMOSFETs. IntechOpen, 2011. https://doi.org/10.5772/15942.
Warning: These citations may not always be 100% accurate.