Search Results - "gaas"

The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy (GS-MBE). We discuss the selective growth of full...

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Existing high-power semiconductor lasers widely use asymmetric large cavity structures or designs with short cavity lengths to enhance device performance, inevitably increasing the device threshold current density and suppressing further improvement of device performance. We have utilized rate equat...

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For the production of integrated analog circuits with a small-scale integration, which are developed to operate at temperatures up to minus 200 ℃ and/or with absorbed dose of gamma radiation up to 5 Mrad, a gallium arsenide master slice has been created. The following types of active elements are us...

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The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors. As the experimental techniques, the electrochemical capacitance-voltage (ECV) profiling and o...

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Based on a technology of 0.15 μm GaAs high electron mobility transistor (pHEMT), a 19~21 GHz high linearity power amplifier MMIC was demonstrated in this paper. In the scenario of signal transmission with high peak-to average power ratio（PAPR）,the efficiency and linearity of power amplifier（PA）have...

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GaAs based nanowire single photon avalanche diode (SPAD) has been demonstrated with extremely small afterpulsing probability and low dark count rate, and hence it has attracted wide attention for the near infrared applications. However, there is a lack of model to accurately evaluate the avalanche b...

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Recently carbon-doped epitaxial layers become more attractive in most practical applications. In this paper we have considered the mechanisms of etching of CCl<sub>4</sub>-doped GaAs grown by MOCVD in the temperature range of 600–800°C. It has been shown that, as temperat...

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Changes in the refractive indices of a GaAs laser chip owing to bonding strain are investigated by two-dimensional (2D) and three-dimensional (3D) finite element method (FEM) simulations. The strain induced by die attach (i.e., the bonding strain) was estimated by fitting simulations to the measured...

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Introduction. The requirements for the performance of measuring devices, including their operating frequency, are constantly becoming stricter. This encourages the creation of wide-band microcircuits for application in microwave blocks of devices, such as vector network analyzers (VNA) and spectrum...

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ABSTRACT The development of flexible freestanding single‐junction GaAs photovoltaic (PV) cells demonstrates a major innovation in solar technology, providing a lightweight, high‐efficiency substitute to traditional silicon‐based PV cells. Chemical vapor deposition (CVD) approach is frequently used t...

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The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and pr...

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The synthesis and characterization of heterostructure por-Ga2O3/GaAs represent a crucial advancement in nanomaterials, particularly in optoelectronic applications. Employing a two-stage electrochemical etching methodology, this research has elucidated the precise conditions required to fabricate su...

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Objectives. Spin nanoelectronics facilitate fundamentally new ways of encoding and encrypting information implemented using photon spins in fibre-optic data transmission lines. The article discusses the possibility of creating a spin LED emitting circularly polarised light.Methods. In a spin LED, sp...

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The luminescent down-shifting (LDS) effect of a colloidal quantum dot layer on a dual junction solar cell is explored and analyzed. A 5.47% enhancement of power conversion efficiency is recorded when green quantum dots are dispersed on device surface. The surface reflectance spectra befor...

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In this paper, two compact on-chip bandpass filters (BPFs) at millimeter-wave frequencies, i.e., single-band BPF and dual-band BPF, are proposed in gallium arsenide (GaAs) technology. To understand the working mechanism of the single-band BPF, a transmission line (TL) equivalent circuit model is pre...

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This is a numerical investigation of optical and electronic characteristics of GaAs spherical quantum dots based on single and double quartic potentials and presenting a hydrogenic impurity at their center. The radial Schrödinger equation was solved using the finite difference method (FDM) to obtain...

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A two-stage low noise amplifier(LNA) with high gain and low power is proposed by analyzing the characteristics of GaAs pHEMT devices. A two-stage structure is used to increase the gain of the low noise amplifier, a shared current structure is presented to reduce the power consumption of the amplifie...

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This paper presents a comprehensive review of GaAs HBT-based Doherty power amplifiers (DPAs) targeting 5G New Radio (NR) handset applications. Focusing on the critical challenges of linearity enhancement, back-off efficiency improvement, bandwidth extension under low-voltage (3.4 V) operation, and c...

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The Low Noise Amplifier (LNA) is typically the initial step in any microwave receiver circuit and is crucial to the receiver's quality. The design, analysis, and modeling of single-stage and multi-stage low-noise amplifiers combined with an optimal matching network at wideband frequencies betw...

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The 122 iron arsenide unconventional superconductors are part of a new class of iron-based superconductors. Co-doped BaFe2xCoxAs2 (Ba-122) iron superconductors sample have been examine by scanning Hall probe microscopy (SHPM) technique to find out the magnetic properties of Ba-122 . Has been comple...

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