Rezultaty - "electron containing"
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III-Nitride Deep UV LED Without Electron Blocking Layer
Wydane 2019-01-01Hasła przedmiotowe: Dokumenty pełnotekstoweAlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as epitaxial complexity. As a result, wall plug efficien...
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