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    19~21 GHz GaAs high linearity power amplifier MMIC

    19~21 GHz GaAs high linearity power amplifier MMIC by Liu Xiaoyu, Han Chenghao, Ruan Wenwu, Guo Runnan, Liu Ling, Xu Xindong, Hou Zewen, Zhuang Yuan, Yu Xuming, Tao Hongqi

    Published 2025-04-01

    Based on a technology of 0.15 μm GaAs high electron mobility transistor (pHEMT), a 19~21 GHz high linearity power amplifier MMIC was demonstrated in this paper. In the scenario of signal transmission with high peak-to average power ratio（PAPR）,the efficiency and linearity of power amplifier（PA）have...

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