Spectra Narrowing of a 976 nm High Power External-Cavity Semiconductor Laser Based on a Transmission Grating
Broad-area 976 nm semiconductor lasers have garnered widespread attention for their applications in generating high-power 488 nm blue laser light and as pump sources for solid-state and ytterbium-doped fiber lasers. Nevertheless, these lasers exhibit a wide gain bandwidth, short cavity length, and u...
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| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10814083/ |
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| author | Di Xin Nihui Zhang Lingqian Meng Qinghao Zhao Weiqiao Zhang Fengxin Dong Xuyan Zhou Hongbo Zhang Wanhua Zheng |
| author_facet | Di Xin Nihui Zhang Lingqian Meng Qinghao Zhao Weiqiao Zhang Fengxin Dong Xuyan Zhou Hongbo Zhang Wanhua Zheng |
| author_sort | Di Xin |
| collection | DOAJ |
| description | Broad-area 976 nm semiconductor lasers have garnered widespread attention for their applications in generating high-power 488 nm blue laser light and as pump sources for solid-state and ytterbium-doped fiber lasers. Nevertheless, these lasers exhibit a wide gain bandwidth, short cavity length, and usually use the natural cleavage surface as the output window, resulting in a broad emitting spectrum in free-running state. We investigated a high-power narrow-linewidth 976 nm edge emitting broad area semiconductor laser (EEL) through external cavity feedback technology by employing a transmission grating as the dispersive element. This configuration achieved a high output power of 11 W and a spectral linewidth of 0.36 nm at 976 nm, corresponding to an intracavity power of 15.7 W. It provided a more flexible cavity structure for direct frequency doubling of the semiconductor laser to generate a high power of 488 nm blue laser. |
| format | Article |
| id | doaj-art-ff906e7b6a5b43c2bb24cd5cc0450147 |
| institution | Matheson Library |
| issn | 1943-0655 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-ff906e7b6a5b43c2bb24cd5cc04501472025-07-02T00:05:03ZengIEEEIEEE Photonics Journal1943-06552025-01-011711610.1109/JPHOT.2024.352161510814083Spectra Narrowing of a 976 nm High Power External-Cavity Semiconductor Laser Based on a Transmission GratingDi Xin0https://orcid.org/0009-0004-7967-3183Nihui Zhang1https://orcid.org/0000-0002-7315-9448Lingqian Meng2Qinghao Zhao3Weiqiao Zhang4Fengxin Dong5Xuyan Zhou6Hongbo Zhang7https://orcid.org/0009-0004-6575-0037Wanhua Zheng8https://orcid.org/0000-0001-9158-6681School of Physics and Physical Engineering, Qufu Normal University, Jining, ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaLaboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaSchool of Information Science and Engineering, Shandong University, Qingdao, ChinaWeifang Academy of Advanced Opto-Electronic Circuits, Weifang, ChinaWeifang Academy of Advanced Opto-Electronic Circuits, Weifang, ChinaLaboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaSchool of Optoelectronics, University of Chinese Academy of Sciences, Beijing, ChinaLaboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaBroad-area 976 nm semiconductor lasers have garnered widespread attention for their applications in generating high-power 488 nm blue laser light and as pump sources for solid-state and ytterbium-doped fiber lasers. Nevertheless, these lasers exhibit a wide gain bandwidth, short cavity length, and usually use the natural cleavage surface as the output window, resulting in a broad emitting spectrum in free-running state. We investigated a high-power narrow-linewidth 976 nm edge emitting broad area semiconductor laser (EEL) through external cavity feedback technology by employing a transmission grating as the dispersive element. This configuration achieved a high output power of 11 W and a spectral linewidth of 0.36 nm at 976 nm, corresponding to an intracavity power of 15.7 W. It provided a more flexible cavity structure for direct frequency doubling of the semiconductor laser to generate a high power of 488 nm blue laser.https://ieeexplore.ieee.org/document/10814083/Broad area semiconductor laserexternal cavitytransmission grating |
| spellingShingle | Di Xin Nihui Zhang Lingqian Meng Qinghao Zhao Weiqiao Zhang Fengxin Dong Xuyan Zhou Hongbo Zhang Wanhua Zheng Spectra Narrowing of a 976 nm High Power External-Cavity Semiconductor Laser Based on a Transmission Grating IEEE Photonics Journal Broad area semiconductor laser external cavity transmission grating |
| title | Spectra Narrowing of a 976 nm High Power External-Cavity Semiconductor Laser Based on a Transmission Grating |
| title_full | Spectra Narrowing of a 976 nm High Power External-Cavity Semiconductor Laser Based on a Transmission Grating |
| title_fullStr | Spectra Narrowing of a 976 nm High Power External-Cavity Semiconductor Laser Based on a Transmission Grating |
| title_full_unstemmed | Spectra Narrowing of a 976 nm High Power External-Cavity Semiconductor Laser Based on a Transmission Grating |
| title_short | Spectra Narrowing of a 976 nm High Power External-Cavity Semiconductor Laser Based on a Transmission Grating |
| title_sort | spectra narrowing of a 976 nm high power external cavity semiconductor laser based on a transmission grating |
| topic | Broad area semiconductor laser external cavity transmission grating |
| url | https://ieeexplore.ieee.org/document/10814083/ |
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