A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells
Filamentary switching memristive devices based on the valence change mechanism (VCM) are promising for non-volatile memory applications due to their ability to store multiple resistance states within a single device. To facilitate the integration into circuits, this study presents an advanced compac...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11083528/ |
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