A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells
Filamentary switching memristive devices based on the valence change mechanism (VCM) are promising for non-volatile memory applications due to their ability to store multiple resistance states within a single device. To facilitate the integration into circuits, this study presents an advanced compac...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11083528/ |
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| Summary: | Filamentary switching memristive devices based on the valence change mechanism (VCM) are promising for non-volatile memory applications due to their ability to store multiple resistance states within a single device. To facilitate the integration into circuits, this study presents an advanced compact model designed for multilevel switching in the VCM devices serially connected with transistors in a 1T-1R configuration. This model is an extension of the existing JART (Jülich Aachen Resistive Switching Tools) VCM v1b model, by incorporating state-dependent effective thermal resistance (<inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {th,eff}}$ </tex-math></inline-formula>) based on an electro-thermal continuum model. This enables precise modeling of multilevel behavior and includes the variability in switching cycles to reflect experimental conditions. The validation with TaOx-based VCM devices co-integrated with 180 nm n-MOS transistors demonstrates the model’s accuracy, achieving consistent multilevel programming across 7-states and capturing cycle-to-cycle variability effectively. This model offers a robust tool for designing reliable, high-density multilevel ReRAM memory system. |
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| ISSN: | 2169-3536 |