Gate Engineering in Two-Dimensional (2D) Channel FET Chemical Sensors: A Comprehensive Review of Architectures, Mechanisms, and Materials
Field-effect transistor (FET) chemical sensors are essential for enabling sophisticated lifestyles and ensuring safe working environments. They can detect a wide range of analytes, including gaseous species (NO<sub>2</sub>, NH<sub>3</sub>, VOCs), ionic compounds, and biologic...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-06-01
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| Series: | Chemosensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2227-9040/13/6/217 |
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| Summary: | Field-effect transistor (FET) chemical sensors are essential for enabling sophisticated lifestyles and ensuring safe working environments. They can detect a wide range of analytes, including gaseous species (NO<sub>2</sub>, NH<sub>3</sub>, VOCs), ionic compounds, and biological molecules. Among the structural components of FETs, the gate configuration plays a vital role in controlling the semiconductor channel’s electrostatic environment, thereby strongly influencing sensing performance. Two-dimensional (2D) materials offer additional advantages in these sensors due to their rich surface chemistry and high sensitivity to external interactions. This review offers a comprehensive classification of 2D channel FET chemical sensors based on their gate configurations. Their working principles, fabrication strategies, and sensing performance are discussed in detail. A critical analysis of the advantages and challenges associated with each gate configuration is performed. This review aims to guide future research on the selection of appropriate device configurations for the development of excellent FET chemical sensors. |
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| ISSN: | 2227-9040 |