Study of the Cu(In,Ga)Se2 crystallization process through a combination of in-situ characterization techniques
This study investigates the crystallization process of amorphous Cu(In,Ga)Se _2 (CIGSe) through in-situ characterization techniques, specifically Raman spectroscopy, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Amorphous CIGSe was deposited through sputtering of a ternary tar...
Sábháilte in:
| Príomhchruthaitheoirí: | , , , , , |
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| Formáid: | Alt |
| Teanga: | Béarla |
| Foilsithe / Cruthaithe: |
IOP Publishing
2025-01-01
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| Sraith: | JPhys Energy |
| Ábhair: | |
| Rochtain ar líne: | https://doi.org/10.1088/2515-7655/ade5c6 |
| Clibeanna: |
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| Achoimre: | This study investigates the crystallization process of amorphous Cu(In,Ga)Se _2 (CIGSe) through in-situ characterization techniques, specifically Raman spectroscopy, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Amorphous CIGSe was deposited through sputtering of a ternary target with simultaneous supply of selenium by evaporation. A Se capping layer revealed to enhance crystallization at lower temperatures, yielding larger crystallites at 400 °C and larger crystal grains after the crystallization process. The A _1 Raman mode of CIGSe appears at a lower temperature and with higher intensity in samples with Se capping compared to those without capping layer. The effect of temperature on the Raman spectra was considered by fitting post-crystallization data with a three-phonon coupling model, allowing for deconvolution of the thermal and material crystallization effects. In-situ XRD data corroborate the Raman data and revealed the formation of MoSe _2 and Cu _2 Se secondary phases at 250 °C and 400 °C, respectively. Moreover, in-situ TEM allowed to further assess crystal growth during the crystallization process. |
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| ISSN: | 2515-7655 |