Resistive Switching in the Cu/Si/SiO2/CdS/CuO/Cu Structure Fabricated at Room Temperature
This work investigates CuO and CdS (material as nanoparticles mixed with a polymer (Cellulose Acetate)) – based ReRAM having stable resistive switching. It also investigates a new composition of a memory which is constructed with silicon as a pedestal, silicon oxide SiO2 thermally grown on it and...
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Tikrit University
2022-12-01
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| Series: | Tikrit Journal of Pure Science |
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| Online Access: | https://tjpsj.org/index.php/tjps/article/view/83 |
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| author | Haneafa Yahya Najm |
| author_facet | Haneafa Yahya Najm |
| author_sort | Haneafa Yahya Najm |
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This work investigates CuO and CdS (material as nanoparticles mixed with a polymer (Cellulose Acetate)) – based ReRAM having stable resistive switching. It also investigates a new composition of a memory which is constructed with silicon as a pedestal, silicon oxide SiO2 thermally grown on it and active materials that include of (CuO material as nanoparticles mixed with a polymer (Cellulose Acetate) layer) sandwiched between two electrodes using similar material and CdS layer as a semiconductor n-type. ReRAM memory cell is a structure such as a capacitor that is consist of semiconducting transition metal oxides or insulating exhibiting inverses resistive switching on applying voltage pulses .The mixed material was coated as a thin layer by using Spin-Coating Instrument. this structure can be switched between low- resistance state (LRS) and high resistance state(HRS);therefore, The present structure behaves as unipolar resistive switching. The resistive behavior will be affected by the top electrode area. This effect occurs more in big top electrode area (TEL=15.896mm2) where, the constituting voltage (Vforming) is inversely proportionately with respect to the top electrode area (A) .Also the (HRS) is inversely proportioned with the (A). The complying current (Icc=20mA) is used for protect the device from the damageable. The fabricated composition has many prosperities, such as Vforming = 7.3volt, Vset = 4volt, VReset = 1.7volt, Finally, the resistance ratio (Rratio) is proportioned directly with the(A) and equal Rratio=157.48 so, this ratio is enough to distinguish amongst the low resistance and the high resistance in a circuit design
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| format | Article |
| id | doaj-art-f45ed9edf7f84dba9ce8ce4ffba3fca1 |
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| issn | 1813-1662 2415-1726 |
| language | English |
| publishDate | 2022-12-01 |
| publisher | Tikrit University |
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| series | Tikrit Journal of Pure Science |
| spelling | doaj-art-f45ed9edf7f84dba9ce8ce4ffba3fca12025-07-12T09:59:16ZengTikrit UniversityTikrit Journal of Pure Science1813-16622415-17262022-12-0127110.25130/tjps.v27i1.83Resistive Switching in the Cu/Si/SiO2/CdS/CuO/Cu Structure Fabricated at Room Temperature Haneafa Yahya Najm This work investigates CuO and CdS (material as nanoparticles mixed with a polymer (Cellulose Acetate)) – based ReRAM having stable resistive switching. It also investigates a new composition of a memory which is constructed with silicon as a pedestal, silicon oxide SiO2 thermally grown on it and active materials that include of (CuO material as nanoparticles mixed with a polymer (Cellulose Acetate) layer) sandwiched between two electrodes using similar material and CdS layer as a semiconductor n-type. ReRAM memory cell is a structure such as a capacitor that is consist of semiconducting transition metal oxides or insulating exhibiting inverses resistive switching on applying voltage pulses .The mixed material was coated as a thin layer by using Spin-Coating Instrument. this structure can be switched between low- resistance state (LRS) and high resistance state(HRS);therefore, The present structure behaves as unipolar resistive switching. The resistive behavior will be affected by the top electrode area. This effect occurs more in big top electrode area (TEL=15.896mm2) where, the constituting voltage (Vforming) is inversely proportionately with respect to the top electrode area (A) .Also the (HRS) is inversely proportioned with the (A). The complying current (Icc=20mA) is used for protect the device from the damageable. The fabricated composition has many prosperities, such as Vforming = 7.3volt, Vset = 4volt, VReset = 1.7volt, Finally, the resistance ratio (Rratio) is proportioned directly with the(A) and equal Rratio=157.48 so, this ratio is enough to distinguish amongst the low resistance and the high resistance in a circuit design https://tjpsj.org/index.php/tjps/article/view/83Resistive switchingRe-RAM memorySilicon MemoryUnipolar RS StructureCuO Nanoparticles in RRAMs |
| spellingShingle | Haneafa Yahya Najm Resistive Switching in the Cu/Si/SiO2/CdS/CuO/Cu Structure Fabricated at Room Temperature Tikrit Journal of Pure Science Resistive switching Re-RAM memory Silicon Memory Unipolar RS Structure CuO Nanoparticles in RRAMs |
| title | Resistive Switching in the Cu/Si/SiO2/CdS/CuO/Cu Structure Fabricated at Room Temperature |
| title_full | Resistive Switching in the Cu/Si/SiO2/CdS/CuO/Cu Structure Fabricated at Room Temperature |
| title_fullStr | Resistive Switching in the Cu/Si/SiO2/CdS/CuO/Cu Structure Fabricated at Room Temperature |
| title_full_unstemmed | Resistive Switching in the Cu/Si/SiO2/CdS/CuO/Cu Structure Fabricated at Room Temperature |
| title_short | Resistive Switching in the Cu/Si/SiO2/CdS/CuO/Cu Structure Fabricated at Room Temperature |
| title_sort | resistive switching in the cu si sio2 cds cuo cu structure fabricated at room temperature |
| topic | Resistive switching Re-RAM memory Silicon Memory Unipolar RS Structure CuO Nanoparticles in RRAMs |
| url | https://tjpsj.org/index.php/tjps/article/view/83 |
| work_keys_str_mv | AT haneafayahyanajm resistiveswitchinginthecusisio2cdscuocustructurefabricatedatroomtemperature |