Design and Numerical Study of Semiconductor Nanolaser With Gaussian-Shaped Metallic Cavity

We propose and numerically investigate a novel metallic semiconductor nanolaser for 1.55-μm wavelength range with Gaussian-shaped cavity structure. By introducing cylindrical facets and curved sidewalls, Gaussian-like resonant mode can be tightly confined in the center of the cavity with...

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Main Authors: Baifu Zhang, Kang Zhu, Jingjing Hao, Bowen Wang, Zhe Shen, Haifeng Hu
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
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Online Access:https://ieeexplore.ieee.org/document/8525286/
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_version_ 1839644974538293248
author Baifu Zhang
Kang Zhu
Jingjing Hao
Bowen Wang
Zhe Shen
Haifeng Hu
author_facet Baifu Zhang
Kang Zhu
Jingjing Hao
Bowen Wang
Zhe Shen
Haifeng Hu
author_sort Baifu Zhang
collection DOAJ
description We propose and numerically investigate a novel metallic semiconductor nanolaser for 1.55-&#x03BC;m wavelength range with Gaussian-shaped cavity structure. By introducing cylindrical facets and curved sidewalls, Gaussian-like resonant mode can be tightly confined in the center of the cavity with reduced electric field component perpendicular to the metallic sidewalls, yielding to significant reduction of plasmonic loss and improvement of <italic>Q</italic> factor and confinement factor. Three-dimensional finite-difference time-domain simulations are conducted and demonstrate the effectiveness of the proposed nanolaser structure. As an example case with subwavelength cavity volume of 0.27&#x03BB; <sup>3</sup>, the proposed structure can improve <italic>Q</italic> factor and confinement factor from 108 and 0.298 of conventional rectangular cavity to 164 and 0.539, respectively, resulting in a dramatic reduction of threshold current from 577 mA to 165 &#x03BC;A. In addition, the dependence of nanolaser properties on cavity geometry is also numerically investigated in this paper.
format Article
id doaj-art-f290413f45d546078d3bfd8e59a68ca4
institution Matheson Library
issn 1943-0655
language English
publishDate 2018-01-01
publisher IEEE
record_format Article
series IEEE Photonics Journal
spelling doaj-art-f290413f45d546078d3bfd8e59a68ca42025-07-01T23:41:27ZengIEEEIEEE Photonics Journal1943-06552018-01-0110611010.1109/JPHOT.2018.28798438525286Design and Numerical Study of Semiconductor Nanolaser With Gaussian-Shaped Metallic CavityBaifu Zhang0https://orcid.org/0000-0002-9634-6086Kang Zhu1Jingjing Hao2Bowen Wang3Zhe Shen4https://orcid.org/0000-0003-3370-8913Haifeng Hu5School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, ChinaSchool of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, ChinaThe 28th Research Institute of China Electronics Technology Group Corporation, Nanjing, ChinaSchool of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, ChinaSchool of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, ChinaSchool of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, ChinaWe propose and numerically investigate a novel metallic semiconductor nanolaser for 1.55-&#x03BC;m wavelength range with Gaussian-shaped cavity structure. By introducing cylindrical facets and curved sidewalls, Gaussian-like resonant mode can be tightly confined in the center of the cavity with reduced electric field component perpendicular to the metallic sidewalls, yielding to significant reduction of plasmonic loss and improvement of <italic>Q</italic> factor and confinement factor. Three-dimensional finite-difference time-domain simulations are conducted and demonstrate the effectiveness of the proposed nanolaser structure. As an example case with subwavelength cavity volume of 0.27&#x03BB; <sup>3</sup>, the proposed structure can improve <italic>Q</italic> factor and confinement factor from 108 and 0.298 of conventional rectangular cavity to 164 and 0.539, respectively, resulting in a dramatic reduction of threshold current from 577 mA to 165 &#x03BC;A. In addition, the dependence of nanolaser properties on cavity geometry is also numerically investigated in this paper.https://ieeexplore.ieee.org/document/8525286/Semiconductor lasersNanocavitiesPlasmonics
spellingShingle Baifu Zhang
Kang Zhu
Jingjing Hao
Bowen Wang
Zhe Shen
Haifeng Hu
Design and Numerical Study of Semiconductor Nanolaser With Gaussian-Shaped Metallic Cavity
IEEE Photonics Journal
Semiconductor lasers
Nanocavities
Plasmonics
title Design and Numerical Study of Semiconductor Nanolaser With Gaussian-Shaped Metallic Cavity
title_full Design and Numerical Study of Semiconductor Nanolaser With Gaussian-Shaped Metallic Cavity
title_fullStr Design and Numerical Study of Semiconductor Nanolaser With Gaussian-Shaped Metallic Cavity
title_full_unstemmed Design and Numerical Study of Semiconductor Nanolaser With Gaussian-Shaped Metallic Cavity
title_short Design and Numerical Study of Semiconductor Nanolaser With Gaussian-Shaped Metallic Cavity
title_sort design and numerical study of semiconductor nanolaser with gaussian shaped metallic cavity
topic Semiconductor lasers
Nanocavities
Plasmonics
url https://ieeexplore.ieee.org/document/8525286/
work_keys_str_mv AT baifuzhang designandnumericalstudyofsemiconductornanolaserwithgaussianshapedmetalliccavity
AT kangzhu designandnumericalstudyofsemiconductornanolaserwithgaussianshapedmetalliccavity
AT jingjinghao designandnumericalstudyofsemiconductornanolaserwithgaussianshapedmetalliccavity
AT bowenwang designandnumericalstudyofsemiconductornanolaserwithgaussianshapedmetalliccavity
AT zheshen designandnumericalstudyofsemiconductornanolaserwithgaussianshapedmetalliccavity
AT haifenghu designandnumericalstudyofsemiconductornanolaserwithgaussianshapedmetalliccavity