Model of the Formation of a Fixed Charge in SiO<sub>2</sub>, Produced by Thermal Oxidation of Silicon

Model of the Formation of a Fixed Charge in SiO<sub>2</sub>, Produced by Thermal Oxidation of Silicon

Solid-state recrystallization of the surface silicon layer after chemical and mechanical polishing with application of fast thermal treatment by pulses of one second duration is one of the feasible methods of improving the silicon surface properties. The purpose of this work is to explore the impact...

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Bibliographic Details
Main Authors: U. A. Pilipenka, H. A. Amelchanka
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2023-08-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
gate dielectric
fixed charge
rapid heat treatment
voltage-capacitance characteristic
surface potential
solid-state recrystallization
interstitial atom of silicon
Online Access:https://doklady.bsuir.by/jour/article/view/3677
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