Model of the Formation of a Fixed Charge in SiO<sub>2</sub>, Produced by Thermal Oxidation of Silicon
Solid-state recrystallization of the surface silicon layer after chemical and mechanical polishing with application of fast thermal treatment by pulses of one second duration is one of the feasible methods of improving the silicon surface properties. The purpose of this work is to explore the impact...
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| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2023-08-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/3677 |
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