Mishchenka, V. N. (2019). THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with submicron length of the gate. Educational institution «Belarusian State University of Informatics and Radioelectronics».
Chicago Style (17th ed.) CitationMishchenka, V. N. THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with Submicron Length of the Gate. Educational institution «Belarusian State University of Informatics and Radioelectronics», 2019.
MLA (9th ed.) CitationMishchenka, V. N. THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with Submicron Length of the Gate. Educational institution «Belarusian State University of Informatics and Radioelectronics», 2019.
Warning: These citations may not always be 100% accurate.