III-Nitride Deep UV LED Without Electron Blocking Layer

QR Code

III-Nitride Deep UV LED Without Electron Blocking Layer

AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as epitaxial complexity. As a result, wall plug efficien...

Fuld beskrivelse

Saved in:

Bibliografiske detaljer
Main Authors:	Zhongjie Ren, Yi Lu, Hsin-Hung Yao, Haiding Sun, Che-Hao Liao, Jiangnan Dai, Changqing Chen, Jae-Hyun Ryou, Jianchang Yan, Junxi Wang, Jinmin Li, Xiaohang Li
Format:	Article
Sprog:	engelsk
Udgivet:	IEEE 2019-01-01
Serier:	IEEE Photonics Journal
Fag:	Aluminum gallium nitride deep UV LED electron blocking electron containing electron overflow.
Online adgang:	https://ieeexplore.ieee.org/document/8656506/
Tags:	Tilføj Tag Ingen Tags, Vær først til at tagge denne postø!

Lignende værker

Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes
af: Gregor Hofmann, et al.
Udgivet: (2024-01-01)

Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs
af: Ran Zhou, et al.
Udgivet: (2025-01-01)

Analytical Modeling of GaN-HEMT Considering Finite Width of Two-Dimensional Electron Gas
af: Behnam Jafari Touchaei, et al.
Udgivet: (2024-07-01)

The Rise of Refractory Transition‐Metal Nitride Films for Advanced Electronics and Plasmonics
af: Jiachang Bi, et al.
Udgivet: (2025-06-01)

Effect of Rapid Thermal Annealing Temperature on the Electrophysical Properties of the Ohmic Contact of Ti/Al/Ni Metallization to the GaN/AlGaN Heterostructure
af: A. D. Yunik, et al.
Udgivet: (2022-06-01)

Effect of Rapid Thermal Annealing Conditions on the Specific Resistance of the Ohmic Contacts of Ti/Al/Ni/Au Metallization to the GaN/AlGaN Heterostructure
af: A. D. Yunik, et al.
Udgivet: (2023-01-01)

Large Signal Performance of the Gallium Nitride Heterostructure Field-Effect Transistor With a Graphene Heat-Removal System
af: V. S. Volcheck, et al.
Udgivet: (2022-03-01)

Numerical simulation of the sensor for toxic nanoparticles based on the heterostructure field effect transistor
af: V. S. Volcheck, et al.
Udgivet: (2020-12-01)

Effect of Sputtering Process Parameters on Physical Properties and Electron Emission Level of Titanium Nitride Films
af: Yang Xia, et al.
Udgivet: (2025-06-01)

Simulation of electron transfer processes in a semiconductor structure using graphene and boron nitride
af: V. V. Muravyov, et al.
Udgivet: (2020-11-01)

Mechanism of Improved Luminescence Intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) Under Thermal and Chemical Treatments
af: Moheb Sheikhi, et al.
Udgivet: (2019-01-01)

Effects of LED Device Size on UV-C Short-Range LoS Optical Wireless Communication
af: Jordan Hill, et al.
Udgivet: (2023-01-01)

DFT Study of Initial Surface Reactions in Gallium Nitride Atomic Layer Deposition Using Trimethylgallium and Ammonia
af: P. Pungboon Pansila, et al.
Udgivet: (2025-07-01)

Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material
af: V. S. Volcheck, et al.
Udgivet: (2021-10-01)

Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas
af: A. D. Yunik, et al.
Udgivet: (2022-12-01)

Used High Collimation UV-LEDs With a Miniaturized Optomechanical Device for the Detection of Direct Bilirubin
af: Zhi Ting Ye, et al.
Udgivet: (2024-01-01)

LED ULTRAVIOLET EXPOSURE UNIT WITH ADJUSTABLE EXPOSURE TIME
af: A. E. Cheliapin, et al.
Udgivet: (2019-12-01)

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure
af: Huabin Yu, et al.
Udgivet: (2019-01-01)

Study of Ga-Polar and N-Polar GaN-Based Green VCSELs by Simulation
af: Ya-Chao Wang, et al.
Udgivet: (2024-01-01)

SETUP FOR MEASUREMENT OF THE PHOTOMETRIC, RADIOMETRIC, SPECTRAL AND SPATIAL CHARACTERISTICS OF RADIATION OF LASER DIODES AND LEDS IN THE SPECTRAL RANGE FROM 250 TO 900 NM
af: S. V. Nikanenka, et al.
Udgivet: (2015-08-01)

INDUCED BANDGAP AND MAGNETIC BEHAVIOR IN ZIGZAG GRAPHENE NANORIBBONS ON HEXAGONAL NITRIDE BORON: EDGE AND SUBSTRATE EFFECTS
af: Viсtor Vasilyevich Ilyasov, et al.
Udgivet: (2013-12-01)

On the Importance of the Polarity for GaN/InGaN Last Quantum Barriers in III-Nitride-Based Light-Emitting Diodes
af: Zi-Hui Zhang, et al.
Udgivet: (2016-01-01)

The Role of Aluminum in Graphitic Carbon Nitride Synthesis from Tiourea
af: S. E. Maksimov, et al.
Udgivet: (2023-06-01)

Density functional theory study of molecular structure, Electronic properties, UV–Vis spectra on coumarin102.
af: Baghdad Science Journal
Udgivet: (2016-06-01)

THE INTENSITY OF SCATTERING OF CHARGE CARRIERS IN GRAPHENE, LOCATED ON A SUBSTRATE OF HEXAGONAL BORON NITRIDE
af: V. V. Muraviev, et al.
Udgivet: (2019-12-01)

Monolithically Integrated Light Feedback Control Circuit for Blue/UV LED Smart Package
af: Zahra Kolahdouz Esfahani, et al.
Udgivet: (2017-01-01)

Simulation of the Mode Dynamics in Broad-Ridge Laser Diodes
af: Eduard Kuhn
Udgivet: (2024-01-01)

On the Impact of Electron Leakage on the Efficiency Droop for AlGaN Based Deep Ultraviolet Light Emitting Diodes
af: Chunshuang Chu, et al.
Udgivet: (2020-01-01)

Influence of Ink Curing in UV LED Inkjet Printing on Colour Differences, Ink Bleeding and Abrasion Resistance of Prints on Textile
af: Gregor Lavrič, et al.
Udgivet: (2021-11-01)

STRUСTURE AND PROPERTIES OF CERAMIC RELAXOR FERROELECTICS OF THE SYSTEM BiScO3 - PbTiO3 WITH MnO2 ADDITIVES IN THE FIELD OF THE MORPHOTROPIC TRANSITION
af: V. P. Sirotinkin, et al.
Udgivet: (2017-02-01)

INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS
af: O. A. Ruban, et al.
Udgivet: (2016-10-01)

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes
af: Steffan Gwyn, et al.
Udgivet: (2021-01-01)

Ultraviolet-A LED Based on Quantum-Disks-In-AlGaN-Nanowires—Optimization and Device Reliability
af: Bilal Janjua, et al.
Udgivet: (2018-01-01)

Attendance of Patients with ophthalmological problems about Eye Protection from UV/blue Light Radiation from Sun light and Electronic Devices in Sulaimani City
af: Salah Qadir Mahmood, et al.
Udgivet: (2018-07-01)

Formation and Properties of Heterosystems Based on Porous Silicon, Graphitic Carbon Nitride and Semiconductor Compounds
af: V. P. Grebnev, et al.
Udgivet: (2022-06-01)

Discovery of New Polymorphs of Gallium Oxides with Particle Swarm Optimization‐Based Structure Searches
af: Xue Wang, et al.
Udgivet: (2020-06-01)

Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States
af: Sebastian Kolle, et al.
Udgivet: (2024-01-01)

Simultaneous Submicron Temperature Mapping of Substrate and Channel in P-GaN/AlGaN/GaN HEMTs Using Raman Thermometry
af: Jaesun Kim, et al.
Udgivet: (2025-07-01)

Performance Characteristics of an Infrared Photodetector Using Intersuband Junctions in Quantum Wells Based on Gallium Nitride
af: V. S. Volcheck, et al.
Udgivet: (2024-06-01)

Physical electronics /
af: Hemenway, Curtis L.
Udgivet: (1967)