III-Nitride Deep UV LED Without Electron Blocking Layer
AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as epitaxial complexity. As a result, wall plug efficien...
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IEEE
2019-01-01
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| श्रृंखला: | IEEE Photonics Journal |
| विषय: | |
| ऑनलाइन पहुंच: | https://ieeexplore.ieee.org/document/8656506/ |
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| _version_ | 1839644972855328768 |
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| author | Zhongjie Ren Yi Lu Hsin-Hung Yao Haiding Sun Che-Hao Liao Jiangnan Dai Changqing Chen Jae-Hyun Ryou Jianchang Yan Junxi Wang Jinmin Li Xiaohang Li |
| author_facet | Zhongjie Ren Yi Lu Hsin-Hung Yao Haiding Sun Che-Hao Liao Jiangnan Dai Changqing Chen Jae-Hyun Ryou Jianchang Yan Junxi Wang Jinmin Li Xiaohang Li |
| author_sort | Zhongjie Ren |
| collection | DOAJ |
| description | AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as epitaxial complexity. As a result, wall plug efficiency (WPE) can be compromised. Our systematic studies of band diagram and carrier concentration reveal that carrier concentrations in the quantum well and electron overflow can be significantly impacted because of the slope variation of the quantum barrier (QB) conduction and valence bands, which in turn influence radiative recombination and optical output power. Remarkably, grading the Al composition from 0.60 to 0.70 for the 12-nm-thick AlGaN QB of the DUV LED without the EBL can lead to 13.5% higher output power and similar level of overflown electron concentration (∼1 × 10<sup>15</sup>/cm<sup>3</sup>) as opposed to the conventional DUV LED with the p-type EBL. This paradigm is significant for the pursuit of higher WPE or shorter emission wavelength for DUV LEDs and lasers, as it provides a new direction for addressing electron overflow and hole injection issues. |
| format | Article |
| id | doaj-art-ea02083394c646c990300aac2f6612ce |
| institution | Matheson Library |
| issn | 1943-0655 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-ea02083394c646c990300aac2f6612ce2025-07-01T23:41:21ZengIEEEIEEE Photonics Journal1943-06552019-01-0111211110.1109/JPHOT.2019.29021258656506III-Nitride Deep UV LED Without Electron Blocking LayerZhongjie Ren0https://orcid.org/0000-0003-0102-797XYi Lu1Hsin-Hung Yao2Haiding Sun3https://orcid.org/0000-0001-8664-666XChe-Hao Liao4Jiangnan Dai5Changqing Chen6Jae-Hyun Ryou7https://orcid.org/0000-0002-7397-6616Jianchang Yan8Junxi Wang9Jinmin Li10Xiaohang Li11https://orcid.org/0000-0002-4434-365XAdvanced Semiconductor Laboratory, King Abdullah University of Science and Technology, Thuwal, Saudi ArabiaAdvanced Semiconductor Laboratory, King Abdullah University of Science and Technology, Thuwal, Saudi ArabiaAdvanced Semiconductor Laboratory, King Abdullah University of Science and Technology, Thuwal, Saudi ArabiaAdvanced Semiconductor Laboratory, King Abdullah University of Science and Technology, Thuwal, Saudi ArabiaAdvanced Semiconductor Laboratory, King Abdullah University of Science and Technology, Thuwal, Saudi ArabiaWuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, ChinaWuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, ChinaDepartment of Mechanical Engineering, Material Science and Engineering Program, Texas Center for Superconductivity at UH, and Advanced Manufacturing Institute, University of Houston, Houston, TX, USAResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaAdvanced Semiconductor Laboratory, King Abdullah University of Science and Technology, Thuwal, Saudi ArabiaAlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as epitaxial complexity. As a result, wall plug efficiency (WPE) can be compromised. Our systematic studies of band diagram and carrier concentration reveal that carrier concentrations in the quantum well and electron overflow can be significantly impacted because of the slope variation of the quantum barrier (QB) conduction and valence bands, which in turn influence radiative recombination and optical output power. Remarkably, grading the Al composition from 0.60 to 0.70 for the 12-nm-thick AlGaN QB of the DUV LED without the EBL can lead to 13.5% higher output power and similar level of overflown electron concentration (∼1 × 10<sup>15</sup>/cm<sup>3</sup>) as opposed to the conventional DUV LED with the p-type EBL. This paradigm is significant for the pursuit of higher WPE or shorter emission wavelength for DUV LEDs and lasers, as it provides a new direction for addressing electron overflow and hole injection issues.https://ieeexplore.ieee.org/document/8656506/Aluminum gallium nitridedeep UV LEDelectron blockingelectron containingelectron overflow. |
| spellingShingle | Zhongjie Ren Yi Lu Hsin-Hung Yao Haiding Sun Che-Hao Liao Jiangnan Dai Changqing Chen Jae-Hyun Ryou Jianchang Yan Junxi Wang Jinmin Li Xiaohang Li III-Nitride Deep UV LED Without Electron Blocking Layer IEEE Photonics Journal Aluminum gallium nitride deep UV LED electron blocking electron containing electron overflow. |
| title | III-Nitride Deep UV LED Without Electron Blocking Layer |
| title_full | III-Nitride Deep UV LED Without Electron Blocking Layer |
| title_fullStr | III-Nitride Deep UV LED Without Electron Blocking Layer |
| title_full_unstemmed | III-Nitride Deep UV LED Without Electron Blocking Layer |
| title_short | III-Nitride Deep UV LED Without Electron Blocking Layer |
| title_sort | iii nitride deep uv led without electron blocking layer |
| topic | Aluminum gallium nitride deep UV LED electron blocking electron containing electron overflow. |
| url | https://ieeexplore.ieee.org/document/8656506/ |
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