Highly Efficient Spin‐Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature
Abstract Energy‐efficient magnetization switching by current‐induced spin‐orbit torques drives the application of spintronics in memory and neural networks. Given the intrinsic strong spin‐orbit coupling, topological insulators (TI) with spin‐momentum locking are expected to be promising candidates...
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| Format: | Article |
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Wiley-VCH
2025-07-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400820 |
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| author | Kewen Zhang Yuhang Wu Jingyan Song Yitian Guo Xiaolun Cai Long Cheng Dongxing Zheng Aitian Chen Peng Li Xixiang Zhang |
| author_facet | Kewen Zhang Yuhang Wu Jingyan Song Yitian Guo Xiaolun Cai Long Cheng Dongxing Zheng Aitian Chen Peng Li Xixiang Zhang |
| author_sort | Kewen Zhang |
| collection | DOAJ |
| description | Abstract Energy‐efficient magnetization switching by current‐induced spin‐orbit torques drives the application of spintronics in memory and neural networks. Given the intrinsic strong spin‐orbit coupling, topological insulators (TI) with spin‐momentum locking are expected to be promising candidates for generating a significant spin‐orbit torque compared to the heavy metal system. To achieve high charge‐to‐spin conversion efficiency, it is imperative to incorporate a ferromagnetic layer with low conductivity. In this study, a high spin‐torque efficiency (βL = 12.9 × 10−6mT A−1cm2) and spin Hall conductivity (σSH=4.8×106ℏ2eΩ−1m−1) are reported as being observed at 80 K in a Cr2Te3/(Bi0.5Sb0.5)2Te3 bilayer. The magnetization switching induced by spin‐orbit torque in a Cr2Te3/(Bi0.5Sb0.5)2Te3 bilayer is observed. It is demonstrated that the hump‐like feature in the anomalous Hall effect (AHE) resistance curve can be attributed to the presence of two magnetic phases in compressively strained chromium telluride grown on a c‐Al2O3 substrate using molecular beam epitaxy (MBE). The work holds the promise of propelling efficiency advancements in spintronic applications that leverage the unique properties of topological insulators. |
| format | Article |
| id | doaj-art-e9bce4a4609d45dba46b2cc8da2e23eb |
| institution | Matheson Library |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Wiley-VCH |
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| series | Advanced Electronic Materials |
| spelling | doaj-art-e9bce4a4609d45dba46b2cc8da2e23eb2025-07-17T15:54:02ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-07-011111n/an/a10.1002/aelm.202400820Highly Efficient Spin‐Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry CurvatureKewen Zhang0Yuhang Wu1Jingyan Song2Yitian Guo3Xiaolun Cai4Long Cheng5Dongxing Zheng6Aitian Chen7Peng Li8Xixiang Zhang9State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 ChinaCollege of Big Data and Statistics Sichuan Tourism University Chengdu 610110 ChinaSchool of Physical Science and Technology ShanghaiTech University Shanghai 201210 ChinaPhysical Science and Engineering Division (PSE) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi ArabiaPhysical Science and Engineering Division (PSE) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi ArabiaState Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 ChinaPhysical Science and Engineering Division (PSE) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi ArabiaAbstract Energy‐efficient magnetization switching by current‐induced spin‐orbit torques drives the application of spintronics in memory and neural networks. Given the intrinsic strong spin‐orbit coupling, topological insulators (TI) with spin‐momentum locking are expected to be promising candidates for generating a significant spin‐orbit torque compared to the heavy metal system. To achieve high charge‐to‐spin conversion efficiency, it is imperative to incorporate a ferromagnetic layer with low conductivity. In this study, a high spin‐torque efficiency (βL = 12.9 × 10−6mT A−1cm2) and spin Hall conductivity (σSH=4.8×106ℏ2eΩ−1m−1) are reported as being observed at 80 K in a Cr2Te3/(Bi0.5Sb0.5)2Te3 bilayer. The magnetization switching induced by spin‐orbit torque in a Cr2Te3/(Bi0.5Sb0.5)2Te3 bilayer is observed. It is demonstrated that the hump‐like feature in the anomalous Hall effect (AHE) resistance curve can be attributed to the presence of two magnetic phases in compressively strained chromium telluride grown on a c‐Al2O3 substrate using molecular beam epitaxy (MBE). The work holds the promise of propelling efficiency advancements in spintronic applications that leverage the unique properties of topological insulators.https://doi.org/10.1002/aelm.202400820anomalous hall effectBerry curvaturechromium telluridemagnetization switchingspin‐orbit torquetopological insulator |
| spellingShingle | Kewen Zhang Yuhang Wu Jingyan Song Yitian Guo Xiaolun Cai Long Cheng Dongxing Zheng Aitian Chen Peng Li Xixiang Zhang Highly Efficient Spin‐Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature Advanced Electronic Materials anomalous hall effect Berry curvature chromium telluride magnetization switching spin‐orbit torque topological insulator |
| title | Highly Efficient Spin‐Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature |
| title_full | Highly Efficient Spin‐Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature |
| title_fullStr | Highly Efficient Spin‐Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature |
| title_full_unstemmed | Highly Efficient Spin‐Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature |
| title_short | Highly Efficient Spin‐Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature |
| title_sort | highly efficient spin orbit torque switching in a topological insulator chromium telluride heterostructure with opposite berry curvature |
| topic | anomalous hall effect Berry curvature chromium telluride magnetization switching spin‐orbit torque topological insulator |
| url | https://doi.org/10.1002/aelm.202400820 |
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