Highly Efficient Spin‐Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature

Highly Efficient Spin‐Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature

Abstract Energy‐efficient magnetization switching by current‐induced spin‐orbit torques drives the application of spintronics in memory and neural networks. Given the intrinsic strong spin‐orbit coupling, topological insulators (TI) with spin‐momentum locking are expected to be promising candidates...

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Bibliographic Details
Main Authors: Kewen Zhang, Yuhang Wu, Jingyan Song, Yitian Guo, Xiaolun Cai, Long Cheng, Dongxing Zheng, Aitian Chen, Peng Li, Xixiang Zhang
Format: Article
Language:English
Published: Wiley-VCH 2025-07-01
Series:Advanced Electronic Materials
Subjects:
anomalous hall effect
Berry curvature
chromium telluride
magnetization switching
spin‐orbit torque
topological insulator
Online Access:https://doi.org/10.1002/aelm.202400820
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Summary:Abstract Energy‐efficient magnetization switching by current‐induced spin‐orbit torques drives the application of spintronics in memory and neural networks. Given the intrinsic strong spin‐orbit coupling, topological insulators (TI) with spin‐momentum locking are expected to be promising candidates for generating a significant spin‐orbit torque compared to the heavy metal system. To achieve high charge‐to‐spin conversion efficiency, it is imperative to incorporate a ferromagnetic layer with low conductivity. In this study, a high spin‐torque efficiency (βL =  12.9 × 10−6mT A−1cm2) and spin Hall conductivity (σSH=4.8×106ℏ2eΩ−1m−1) are reported as being observed at 80 K in a Cr2Te3/(Bi0.5Sb0.5)2Te3 bilayer. The magnetization switching induced by spin‐orbit torque in a Cr2Te3/(Bi0.5Sb0.5)2Te3 bilayer is observed. It is demonstrated that the hump‐like feature in the anomalous Hall effect (AHE) resistance curve can be attributed to the presence of two magnetic phases in compressively strained chromium telluride grown on a c‐Al2O3 substrate using molecular beam epitaxy (MBE). The work holds the promise of propelling efficiency advancements in spintronic applications that leverage the unique properties of topological insulators.
ISSN:2199-160X

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