Experimental Investigation of Si/SnOx Heterojunction for Its Tunable Optoelectronic Properties
We report growth and characterization of n-Si/p-SnO<sub>x</sub> heterojunction using RF sputtering for deposition of p-type SnO<sub>x</sub> under controlled growth oxygen pressure over n-type silicon (Si) wafer. The heterojunction properties of Si/SnO<...
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2024-01-01
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| author | Manoj Kumar Vivek Kumar Srivastava M. Sudhakara Reddy Ram Bharos Yadav Manoj Sharma Amrindra Pal Purnendu Shekhar Pandey Yadvendra Singh Gyanendra Kumar Singh Balkeshwar Singh |
| author_facet | Manoj Kumar Vivek Kumar Srivastava M. Sudhakara Reddy Ram Bharos Yadav Manoj Sharma Amrindra Pal Purnendu Shekhar Pandey Yadvendra Singh Gyanendra Kumar Singh Balkeshwar Singh |
| author_sort | Manoj Kumar |
| collection | DOAJ |
| description | We report growth and characterization of n-Si/p-SnO<sub>x</sub> heterojunction using RF sputtering for deposition of p-type SnO<sub>x</sub> under controlled growth oxygen pressure over n-type silicon (Si) wafer. The heterojunction properties of Si/SnO<sub>x</sub> were varied by controlling the growth oxygen pressure of SnOx. Several characterization techniques, including PL (photoluminescence), AFM (atomic force microscopy), FESEM (field emission scanning electron microscopy), XRD, I-V characteristics and Hall measurement, were conducted to analyze the structural, optical, and electrical properties of the n-Si/p-SnOx heterojunction. The knee voltage (V<sub>knee</sub>), or cut-in voltage, was calculated by analyzing the gradient of the dark current-voltage (J-V) curves when the bias was applied in the forward direction. The V<sub>knee</sub> values for type-I, type-II, and type-III n-Si/p-SnO<sub>x</sub> heterojunctions were determined to be 0.62 V, 0.84 V, and 1.0 V, respectively. The ideality factors (n<sub>1</sub> and n<sub>2</sub>) were determined to be 1.52, 2.22, 3.52, and 8.41, 9.31, 10.34, respectively, for various heterojunction types. The reverse saturation current densities, J<sub>01</sub> and J<sub>02</sub> ranging from approximately 10<sup>−7</sup> to 10<sup>−6</sup> A/cm<sup>2</sup>, and 10<sup>−5</sup> to 10<sup>−4</sup> A/cm<sup>2</sup>, respectively. The objective of this experimental work is to investigate especially, the prospect of silicon /metal-oxide (Si/SnOx) based heterojunction to be used as optical sensors with tunable optoelectronic properties of SnOx. |
| format | Article |
| id | doaj-art-e4c3b49d2aa24f7c93b41b8a52fb9be2 |
| institution | Matheson Library |
| issn | 1943-0655 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
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| series | IEEE Photonics Journal |
| spelling | doaj-art-e4c3b49d2aa24f7c93b41b8a52fb9be22025-07-02T00:02:54ZengIEEEIEEE Photonics Journal1943-06552024-01-011651710.1109/JPHOT.2024.345251410660480Experimental Investigation of Si/SnOx Heterojunction for Its Tunable Optoelectronic PropertiesManoj Kumar0https://orcid.org/0000-0003-3733-295XVivek Kumar Srivastava1M. Sudhakara Reddy2Ram Bharos Yadav3https://orcid.org/0009-0003-0504-6825Manoj Sharma4https://orcid.org/0000-0002-0938-1722Amrindra Pal5https://orcid.org/0000-0001-7806-2453Purnendu Shekhar Pandey6https://orcid.org/0000-0003-1276-5388Yadvendra Singh7https://orcid.org/0000-0001-7228-0660Gyanendra Kumar Singh8https://orcid.org/0000-0003-3765-9071Balkeshwar Singh9https://orcid.org/0000-0003-3376-6857Department of Electronics and Communication Engineering, MLR Institute of Technology, Hyderabad, IndiaElectrical Engineering Department, GLA University, Mathura, IndiaDepartment of Physics & Electronics, JAIN (Deemed to be University), Bangalore, IndiaDepartment of Electronics and Communication Engineering, G.B. Pant Institute of Engineering and Technology, Pauri Garhwal, IndiaBharati Vidyapeeth's College of Engineering, New Delhi, IndiaDepartment of ECE, University Centre for Research and Development, Chandigarh University, Mohali, IndiaDepartment of Electronics and Communication Engineering, G.L. Bajaj Institute of Technology and Management, Greater Noida, IndiaUttaranchal Institute of Technology, Uttaranchal University, Dehradun, IndiaDepartment of Mechanical Engineering, Laxmi Chand Institute of Technology, Bilaspur, IndiaDepartment of Mechanical Engineering, Program of Manufacturing Engineering, Adama Science and Technology University, Adama, EthiopiaWe report growth and characterization of n-Si/p-SnO<sub>x</sub> heterojunction using RF sputtering for deposition of p-type SnO<sub>x</sub> under controlled growth oxygen pressure over n-type silicon (Si) wafer. The heterojunction properties of Si/SnO<sub>x</sub> were varied by controlling the growth oxygen pressure of SnOx. Several characterization techniques, including PL (photoluminescence), AFM (atomic force microscopy), FESEM (field emission scanning electron microscopy), XRD, I-V characteristics and Hall measurement, were conducted to analyze the structural, optical, and electrical properties of the n-Si/p-SnOx heterojunction. The knee voltage (V<sub>knee</sub>), or cut-in voltage, was calculated by analyzing the gradient of the dark current-voltage (J-V) curves when the bias was applied in the forward direction. The V<sub>knee</sub> values for type-I, type-II, and type-III n-Si/p-SnO<sub>x</sub> heterojunctions were determined to be 0.62 V, 0.84 V, and 1.0 V, respectively. The ideality factors (n<sub>1</sub> and n<sub>2</sub>) were determined to be 1.52, 2.22, 3.52, and 8.41, 9.31, 10.34, respectively, for various heterojunction types. The reverse saturation current densities, J<sub>01</sub> and J<sub>02</sub> ranging from approximately 10<sup>−7</sup> to 10<sup>−6</sup> A/cm<sup>2</sup>, and 10<sup>−5</sup> to 10<sup>−4</sup> A/cm<sup>2</sup>, respectively. The objective of this experimental work is to investigate especially, the prospect of silicon /metal-oxide (Si/SnOx) based heterojunction to be used as optical sensors with tunable optoelectronic properties of SnOx.https://ieeexplore.ieee.org/document/10660480/Metal oxideoptoelectronicSnOsiliconthin film |
| spellingShingle | Manoj Kumar Vivek Kumar Srivastava M. Sudhakara Reddy Ram Bharos Yadav Manoj Sharma Amrindra Pal Purnendu Shekhar Pandey Yadvendra Singh Gyanendra Kumar Singh Balkeshwar Singh Experimental Investigation of Si/SnOx Heterojunction for Its Tunable Optoelectronic Properties IEEE Photonics Journal Metal oxide optoelectronic SnO silicon thin film |
| title | Experimental Investigation of Si/SnOx Heterojunction for Its Tunable Optoelectronic Properties |
| title_full | Experimental Investigation of Si/SnOx Heterojunction for Its Tunable Optoelectronic Properties |
| title_fullStr | Experimental Investigation of Si/SnOx Heterojunction for Its Tunable Optoelectronic Properties |
| title_full_unstemmed | Experimental Investigation of Si/SnOx Heterojunction for Its Tunable Optoelectronic Properties |
| title_short | Experimental Investigation of Si/SnOx Heterojunction for Its Tunable Optoelectronic Properties |
| title_sort | experimental investigation of si x002f snox heterojunction for its tunable optoelectronic properties |
| topic | Metal oxide optoelectronic SnO silicon thin film |
| url | https://ieeexplore.ieee.org/document/10660480/ |
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