Electro-absorption and Electro-optic Characterization of L-Band InAs/InP Quantum-dash Waveguide
Electro-absorption and electro-optic characteristics of InAs/InP quantum-dash active region-based waveguide, emitting at ∼1600 nm is investigated. Two major peaks were observed in the change of absorption spectrum with a maximum value of 7070 cm<sup>−1</sup&...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9072590/ |
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| Summary: | Electro-absorption and electro-optic characteristics of InAs/InP quantum-dash active region-based waveguide, emitting at ∼1600 nm is investigated. Two major peaks were observed in the change of absorption spectrum with a maximum value of 7070 cm<sup>−1</sup> at a bias voltage of -8V with an excellent uniform extinction ratio of ∼15 dB across the wavelength range of operation (1460–1620 nm). The effect of temperature on electro-absorption (EA) measurement suggests a strong influence resulting in merging of two major change of absorption spectrum peaks with higher temperature. Furthermore, electro-optic measurements indicate a change in refractive index and its efficiency values of ∼2.9 × 10<sup>−4</sup> and ∼0.5 × 10<sup>−4</sup> V<sup>−1</sup>, respectively, hence exhibiting a low chirping factor of 0.9 and 1.5 at bias voltages of −2 V and −4 V, respectively. As a quasi-three-dimensionally confined structure possessing both quantum well- and quantum dot-like features, the quantum dash waveguide showed superior electro-absorption and electro-optic properties compared to quantum dots and close to that of quantum wells, while attaining low chirp and broad wavelength range of operation. This paves a way for potential realization of quantum dash-based EA and electro-optic modulator for future optical access networks, particularly operating in wide C- to L-band region. |
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| ISSN: | 1943-0655 |