2DEG properties of AlScN/GaN and AlYN/GaN HEMTs determined by terahertz optical Hall effect
We present a contactless determination of the two-dimensional electron gas (2DEG) properties in AlScN/GaN and AlYN/GaN high electron mobility transistor (HEMT) structures using the terahertz optical Hall effect (OHE) over a temperature range of 20 K–360 K. The structures are grown on sapphire or 4H-...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2025-07-01
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| Series: | Frontiers in Electronic Materials |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/femat.2025.1622176/full |
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