Low Resistivity and High Carrier Concentration in SnO<sub>2</sub> Thin Films: The Impact of Nitrogen–Hydrogen Annealing Treatments
The tin dioxide (SnO<sub>2</sub>) thin films in this work were prepared by using plasma-enhanced atomic layer deposition (PEALD), and a systematic analysis was conducted to evaluate the influence of post-deposition annealing at various temperatures in a nitrogen–hydrogen mixed atmosphere...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-06-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/13/986 |
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| Summary: | The tin dioxide (SnO<sub>2</sub>) thin films in this work were prepared by using plasma-enhanced atomic layer deposition (PEALD), and a systematic analysis was conducted to evaluate the influence of post-deposition annealing at various temperatures in a nitrogen–hydrogen mixed atmosphere on their surface morphology, optical behavior, and electrical performance. The SnO<sub>2</sub> films were characterized by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Hall effect measurements. With increasing annealing temperatures, the SnO<sub>2</sub> films exhibited enhanced crystallinity, a higher oxygen vacancy (O<sub>V</sub>) peak area ratio, and improved mobility and carrier concentration. These enhancements make the annealed SnO<sub>2</sub> films highly suitable as electron transport layers (ETLs) in perovskite solar cells (PSCs), providing practical guidance for the design of high-performance PSCs. |
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| ISSN: | 2079-4991 |