The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide

We present the results of silicon carbide (SiC) thin film synthesis on Si(111) substrates using chemical vapor deposition by decomposing CH<sub>4</sub> in H<sub>2</sub> at 1135 °C. The experiments were conducted in an Oxford Nanofab Plasmalab System 100 for carbon phase depos...

Full description

Saved in:

Bibliographic Details
Main Authors:	Teodor Milenov, Vladimir Mehandzhiev, Peter Rafailov, Ivalina Avramova, Ivan Zahariev, Georgi Avdeev, Daniela Karashanova, Biliana Georgieva, Penka Terziyska, Kiril Kirilov, Blagoy Blagoev, Stefan Kolev, Dimitar Dimov, Dobromir Kalchevski, Desislava Karaivanova, Valentin Popov
Format:	Article
Language:	English
Published:	MDPI AG 2025-06-01
Series:	Applied Sciences
Subjects:	silicon carbide chemical vapor deposition X-ray diffraction X-ray photoelectron spectroscopy transmission electron microscopy
Online Access:	https://www.mdpi.com/2076-3417/15/13/7078
Tags:	Add Tag No Tags, Be the first to tag this record!

Be the first to leave a comment!

The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide

Similar Items