Anisotropic reactive ion etching of 2.5 micrometer thick alpha phase tantalum films for surface micromachining
An etch parameter study is conducted with the objective of achieving high anisotropy for tantalum (Ta) thin films of more than 1 μm in thickness. The gases explored are Argon (Ar), carbon tetrafluoride (CF4) and oxygen. The effects of composition, flow, pressure, and power are investigated. Optical...
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| Hauptverfasser: | , , |
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| Format: | Artikel |
| Sprache: | Englisch |
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Elsevier
2025-09-01
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| Schriftenreihe: | Micro and Nano Engineering |
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| Online-Zugang: | http://www.sciencedirect.com/science/article/pii/S2590007225000115 |
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