Doping Effects on Magnetic and Electronic Transport Properties in BaZn<sub>2</sub>As<sub>2</sub>
Novel diluted magnetic semiconductors derived from BaZn<sub>2</sub>As<sub>2</sub> are of considerable importance owing to their elevated Curie temperature of 260 K, the diversity of magnetic states they exhibit, and their prospective applications in multilayer heterojunctions...
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2025-06-01
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| author | Guoqiang Zhao Gangxu Gu Shuai Yang Yi Peng Xiang Li Kenji M. Kojima Chaojing Lin Xiancheng Wang Timothy Ziman Yasutomo J. Uemura Bo Gu Gang Su Sadamichi Maekawa Yongqing Li Changqing Jin |
| author_facet | Guoqiang Zhao Gangxu Gu Shuai Yang Yi Peng Xiang Li Kenji M. Kojima Chaojing Lin Xiancheng Wang Timothy Ziman Yasutomo J. Uemura Bo Gu Gang Su Sadamichi Maekawa Yongqing Li Changqing Jin |
| author_sort | Guoqiang Zhao |
| collection | DOAJ |
| description | Novel diluted magnetic semiconductors derived from BaZn<sub>2</sub>As<sub>2</sub> are of considerable importance owing to their elevated Curie temperature of 260 K, the diversity of magnetic states they exhibit, and their prospective applications in multilayer heterojunctions. However, the transition from the intrinsic semiconductor BaZn<sub>2</sub>As<sub>2</sub> (BZA) to its doped compounds has not been extensively explored, especially in relation to the significant intermediate compound Ba(Zn,Mn)<sub>2</sub>As<sub>2</sub> (BZMA). This study aims to address this gap by performing susceptibility and magnetization measurements, in addition to electronic transport analyses, on these compounds in their single crystal form. Key findings include the following: (1) carriers can significantly modulate the magnetism, transitioning from a non-magnetic BZA to a weak magnetic BZMA, and subsequently to a hard ferromagnet (Ba,K)(Zn,Mn)<sub>2</sub>As<sub>2</sub> with potassium (K) doping to BZMA; (2) two distinct sets of metal-insulator transitions were identified, which can be elucidated by the involvement of carriers and the emergence of various magnetic states, respectively; and (3) BZMA exhibits colossal negative magnetoresistance, and by lanthanum (La) doping, a potential n-type (Ba,La)(Zn,Mn)<sub>2</sub>As<sub>2</sub> single crystal was synthesized, demonstrating promising prospects for p-n junction applications. This study enhances our understanding of the magnetic interactions and evolutions among these compounds, particularly in the low-doping regime, thereby providing a comprehensive physical framework that complements previous findings related to the high-doping region. |
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| issn | 2073-4352 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | MDPI AG |
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| series | Crystals |
| spelling | doaj-art-df03d0f2defe40c8b582ffa3ef7bfa9c2025-06-25T13:41:20ZengMDPI AGCrystals2073-43522025-06-0115658210.3390/cryst15060582Doping Effects on Magnetic and Electronic Transport Properties in BaZn<sub>2</sub>As<sub>2</sub>Guoqiang Zhao0Gangxu Gu1Shuai Yang2Yi Peng3Xiang Li4Kenji M. Kojima5Chaojing Lin6Xiancheng Wang7Timothy Ziman8Yasutomo J. Uemura9Bo Gu10Gang Su11Sadamichi Maekawa12Yongqing Li13Changqing Jin14Kavli Institute for Theoretical Sciences (KITS), University of Chinese Academy of Sciences, Beijing 101408, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaKavli Institute for Theoretical Sciences (KITS), University of Chinese Academy of Sciences, Beijing 101408, ChinaTRIUMF, Vancouver, BC V6T 2A3, CanadaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaKavli Institute for Theoretical Sciences (KITS), University of Chinese Academy of Sciences, Beijing 101408, ChinaDepartment of Physics, Columbia University, New York, NY 10027, USAKavli Institute for Theoretical Sciences (KITS), University of Chinese Academy of Sciences, Beijing 101408, ChinaKavli Institute for Theoretical Sciences (KITS), University of Chinese Academy of Sciences, Beijing 101408, ChinaKavli Institute for Theoretical Sciences (KITS), University of Chinese Academy of Sciences, Beijing 101408, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaNovel diluted magnetic semiconductors derived from BaZn<sub>2</sub>As<sub>2</sub> are of considerable importance owing to their elevated Curie temperature of 260 K, the diversity of magnetic states they exhibit, and their prospective applications in multilayer heterojunctions. However, the transition from the intrinsic semiconductor BaZn<sub>2</sub>As<sub>2</sub> (BZA) to its doped compounds has not been extensively explored, especially in relation to the significant intermediate compound Ba(Zn,Mn)<sub>2</sub>As<sub>2</sub> (BZMA). This study aims to address this gap by performing susceptibility and magnetization measurements, in addition to electronic transport analyses, on these compounds in their single crystal form. Key findings include the following: (1) carriers can significantly modulate the magnetism, transitioning from a non-magnetic BZA to a weak magnetic BZMA, and subsequently to a hard ferromagnet (Ba,K)(Zn,Mn)<sub>2</sub>As<sub>2</sub> with potassium (K) doping to BZMA; (2) two distinct sets of metal-insulator transitions were identified, which can be elucidated by the involvement of carriers and the emergence of various magnetic states, respectively; and (3) BZMA exhibits colossal negative magnetoresistance, and by lanthanum (La) doping, a potential n-type (Ba,La)(Zn,Mn)<sub>2</sub>As<sub>2</sub> single crystal was synthesized, demonstrating promising prospects for p-n junction applications. This study enhances our understanding of the magnetic interactions and evolutions among these compounds, particularly in the low-doping regime, thereby providing a comprehensive physical framework that complements previous findings related to the high-doping region.https://www.mdpi.com/2073-4352/15/6/582BaZn<sub>2</sub>As<sub>2</sub>diluted magnetic semiconductorsmetal–insulator transitioncolossal negative magnetoresistanceanomalous hall effect |
| spellingShingle | Guoqiang Zhao Gangxu Gu Shuai Yang Yi Peng Xiang Li Kenji M. Kojima Chaojing Lin Xiancheng Wang Timothy Ziman Yasutomo J. Uemura Bo Gu Gang Su Sadamichi Maekawa Yongqing Li Changqing Jin Doping Effects on Magnetic and Electronic Transport Properties in BaZn<sub>2</sub>As<sub>2</sub> Crystals BaZn<sub>2</sub>As<sub>2</sub> diluted magnetic semiconductors metal–insulator transition colossal negative magnetoresistance anomalous hall effect |
| title | Doping Effects on Magnetic and Electronic Transport Properties in BaZn<sub>2</sub>As<sub>2</sub> |
| title_full | Doping Effects on Magnetic and Electronic Transport Properties in BaZn<sub>2</sub>As<sub>2</sub> |
| title_fullStr | Doping Effects on Magnetic and Electronic Transport Properties in BaZn<sub>2</sub>As<sub>2</sub> |
| title_full_unstemmed | Doping Effects on Magnetic and Electronic Transport Properties in BaZn<sub>2</sub>As<sub>2</sub> |
| title_short | Doping Effects on Magnetic and Electronic Transport Properties in BaZn<sub>2</sub>As<sub>2</sub> |
| title_sort | doping effects on magnetic and electronic transport properties in bazn sub 2 sub as sub 2 sub |
| topic | BaZn<sub>2</sub>As<sub>2</sub> diluted magnetic semiconductors metal–insulator transition colossal negative magnetoresistance anomalous hall effect |
| url | https://www.mdpi.com/2073-4352/15/6/582 |
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