Lateral Si<sub>0.15</sub>Ge<sub>0.85</sub>/Ge/Si<sub>0.15</sub>Ge<sub>0.85</sub> Double-Heterojunction Laser With SiN Stressor
Integrated circuit technology has undergone significant advancements and progress over the past few decades. However, as the demand to further shrink circuit sizes increases, traditional IC interconnections face challenges such as RC delay, energy loss, and interconnect interference, which become in...
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IEEE
2023-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10193758/ |
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| author | Xinyang Sun Bin Shu Huiyong Hu |
| author_facet | Xinyang Sun Bin Shu Huiyong Hu |
| author_sort | Xinyang Sun |
| collection | DOAJ |
| description | Integrated circuit technology has undergone significant advancements and progress over the past few decades. However, as the demand to further shrink circuit sizes increases, traditional IC interconnections face challenges such as RC delay, energy loss, and interconnect interference, which become increasingly prominent. Optical interconnection emerges as a promising solution to mitigate these issues by enabling reductions in circuit size, power consumption, and signal delay. In this article, we propose a novel lateral Si<sub>0.15</sub>Ge<sub>0.85</sub>/Ge/Si<sub>0.15</sub>Ge<sub>0.85</sub> p-i-n double-heterojunction laser array, leveraging SiN stress as a key component. Our study focuses on the EL emission properties of individual lasers within the array, the distribution of SiN stress within the device, and the impact of stress on the laser properties. Additionally, we design a Si<sub>0.15</sub>Ge<sub>0.85</sub>/SiO<sub>2</sub> distributed Bragg reflector (DBR) tailored for the laser array. Simulation results demonstrate a peak luminescence wavelength of 1849 nm and a threshold current density of 190 kA/cm<sup>2</sup> at 300 K. |
| format | Article |
| id | doaj-art-dbb8a62d124e48ae85de916ab13fac6a |
| institution | Matheson Library |
| issn | 1943-0655 |
| language | English |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-dbb8a62d124e48ae85de916ab13fac6a2025-07-01T23:24:59ZengIEEEIEEE Photonics Journal1943-06552023-01-011541810.1109/JPHOT.2023.329868210193758Lateral Si<sub>0.15</sub>Ge<sub>0.85</sub>/Ge/Si<sub>0.15</sub>Ge<sub>0.85</sub> Double-Heterojunction Laser With SiN StressorXinyang Sun0https://orcid.org/0000-0002-7218-3024Bin Shu1https://orcid.org/0009-0007-1309-464XHuiyong Hu2National Key Laboratory of Wide Band Gap Semiconductor, School of microelectronics, Xidian University, Xi'an, ChinaNational Key Laboratory of Wide Band Gap Semiconductor, School of microelectronics, Xidian University, Xi'an, ChinaNational Key Laboratory of Wide Band Gap Semiconductor, School of microelectronics, Xidian University, Xi'an, ChinaIntegrated circuit technology has undergone significant advancements and progress over the past few decades. However, as the demand to further shrink circuit sizes increases, traditional IC interconnections face challenges such as RC delay, energy loss, and interconnect interference, which become increasingly prominent. Optical interconnection emerges as a promising solution to mitigate these issues by enabling reductions in circuit size, power consumption, and signal delay. In this article, we propose a novel lateral Si<sub>0.15</sub>Ge<sub>0.85</sub>/Ge/Si<sub>0.15</sub>Ge<sub>0.85</sub> p-i-n double-heterojunction laser array, leveraging SiN stress as a key component. Our study focuses on the EL emission properties of individual lasers within the array, the distribution of SiN stress within the device, and the impact of stress on the laser properties. Additionally, we design a Si<sub>0.15</sub>Ge<sub>0.85</sub>/SiO<sub>2</sub> distributed Bragg reflector (DBR) tailored for the laser array. Simulation results demonstrate a peak luminescence wavelength of 1849 nm and a threshold current density of 190 kA/cm<sup>2</sup> at 300 K.https://ieeexplore.ieee.org/document/10193758/Photoelectric integrationdouble-heterojunction laserSiN stressorGermaniumDBR |
| spellingShingle | Xinyang Sun Bin Shu Huiyong Hu Lateral Si<sub>0.15</sub>Ge<sub>0.85</sub>/Ge/Si<sub>0.15</sub>Ge<sub>0.85</sub> Double-Heterojunction Laser With SiN Stressor IEEE Photonics Journal Photoelectric integration double-heterojunction laser SiN stressor Germanium DBR |
| title | Lateral Si<sub>0.15</sub>Ge<sub>0.85</sub>/Ge/Si<sub>0.15</sub>Ge<sub>0.85</sub> Double-Heterojunction Laser With SiN Stressor |
| title_full | Lateral Si<sub>0.15</sub>Ge<sub>0.85</sub>/Ge/Si<sub>0.15</sub>Ge<sub>0.85</sub> Double-Heterojunction Laser With SiN Stressor |
| title_fullStr | Lateral Si<sub>0.15</sub>Ge<sub>0.85</sub>/Ge/Si<sub>0.15</sub>Ge<sub>0.85</sub> Double-Heterojunction Laser With SiN Stressor |
| title_full_unstemmed | Lateral Si<sub>0.15</sub>Ge<sub>0.85</sub>/Ge/Si<sub>0.15</sub>Ge<sub>0.85</sub> Double-Heterojunction Laser With SiN Stressor |
| title_short | Lateral Si<sub>0.15</sub>Ge<sub>0.85</sub>/Ge/Si<sub>0.15</sub>Ge<sub>0.85</sub> Double-Heterojunction Laser With SiN Stressor |
| title_sort | lateral si sub 0 15 sub ge sub 0 85 sub x002f ge x002f si sub 0 15 sub ge sub 0 85 sub double heterojunction laser with sin stressor |
| topic | Photoelectric integration double-heterojunction laser SiN stressor Germanium DBR |
| url | https://ieeexplore.ieee.org/document/10193758/ |
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