Efficient implementation of the Hodgkin-Huxley potassium channel via a single volatile memristor
IntroductionIn 2012, potassium and sodium ion channels in Hodgkin-Huxley-based brain models were shown to exhibit memristive behavior. This positioned memristors as strong candidates for implementing biologically accurate artificial neurons. Memristor-based brain simulations offer advantages in ener...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2025-07-01
|
| Series: | Frontiers in Neuroscience |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/fnins.2025.1569397/full |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | IntroductionIn 2012, potassium and sodium ion channels in Hodgkin-Huxley-based brain models were shown to exhibit memristive behavior. This positioned memristors as strong candidates for implementing biologically accurate artificial neurons. Memristor-based brain simulations offer advantages in energy efficiency, scalability, and compactness, benefiting fields such as soft robotics, embedded systems, and neuroprosthetics.MethodsPrevious approaches used current-controlled Mott memristors, which poorly matched the voltage-controlled nature of ion channels. This study employs volatile, oxide-based memristors that leverage electric-field-driven oxygen-vacancy migration to emulate voltage-dependent channel behavior. We selected candidate WOx and NbOx memristors and modeled their dynamics to verify performance as Hodgkin-Huxley potassium channels.ResultsThe device exhibits sigmoidal gating and voltage-dependent time constants consistent with the theoretical model. By scaling the passive circuitry around the memristors, we show that they capture the essential mechanisms of potassium ion-channels, although spike height is reduced due to strong non-linear voltage-dependence. Still, by cascading multiple compartments, typical spike propagation is retained.DiscussionThis is the first demonstration of a voltage-controlled memristor replicating the Hodgkin-Huxley potassium channel, validating its potential for more efficient brain simulation hardware. |
|---|---|
| ISSN: | 1662-453X |