Confinement of Electrons at the LaInO3/BaSnO3 Heterointerface

Confinement of Electrons at the LaInO3/BaSnO3 Heterointerface

Abstract The properties of the conductance at the LaInO3/BaSnO3 heterointerface are reported. The heterointerface is formed by covering the semi‐insulating BaSnO3:La thin films with 10 nm LaInO3 films, which are all epitaxially grown on NdScO3 substrates. Structural properties of BaSnO3 thin films a...

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Bibliographic Details
Main Authors: Daniel Pfützenreuter, Seonghyeon Kim, Hyeongmin Cho, Oliver Bierwagen, Martina Zupancic, Martin Albrecht, Kookrin Char, Jutta Schwarzkopf
Format: Article
Language:English
Published: Wiley-VCH 2022-12-01
Series:Advanced Materials Interfaces
Subjects:
2D electron gas
BaSnO 3
LaInO 3
persovskite
transparent conducting oxides
Online Access:https://doi.org/10.1002/admi.202201279
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https://doi.org/10.1002/admi.202201279

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