INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY
Methods of chem-mech polishing and chemical etching were described, and characteristics of Ge wafers were investigated corresponding to technical requirements of MBE growth. Investigation methods included optical microscopy, X-ray diffraction analysis, high-resolution diffraction analysis, AFM and I...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
MIREA - Russian Technological University
2013-10-01
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| Series: | Тонкие химические технологии |
| Subjects: | |
| Online Access: | https://www.finechem-mirea.ru/jour/article/view/535 |
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| Summary: | Methods of chem-mech polishing and chemical etching were described, and characteristics of Ge wafers were investigated corresponding to technical requirements of MBE growth. Investigation methods included optical microscopy, X-ray diffraction analysis, high-resolution diffraction analysis, AFM and IR-Fourier microscopy. |
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| ISSN: | 2410-6593 2686-7575 |