Analysis and Optimization of Vertical NPN BJT for Strong Magnetic Fields

Analysis and Optimization of Vertical NPN BJT for Strong Magnetic Fields

This study systematically investigates the electrical characteristics of the vertical NPN bipolar junction transistor (VNPN BJT) in the strong magnetic field environment, focusing on analyzing the effects of magnetic field direction and intensity on key parameters such as terminal current and curren...

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Bibliographic Details
Main Authors: Xinfang Liao, Kexin Guo, Changqing Xu, Yi Liu, Fanxin Meng, Junyi Zhou, Rui Ding, Juxiang Li, Kai Huang, Yintang Yang
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Micromachines
Subjects:
BJT
magnetic field
asymmetry
current gain
Online Access:https://www.mdpi.com/2072-666X/16/6/671
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