High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer Electret
Abstract Organic nonvolatile memory devices based on organic field‐effect transistors (OFETs) have attracted attention as promising memory components in flexible organic integrated circuits. OFET‐based organic memories can be fabricated using solution processes with high portability and flexibility....
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2020-06-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202000189 |
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| author | Yeon‐Ju Kim Minji Kang Min‐Hye Lee Ji‐Sue Kang Dong‐Yu Kim |
| author_facet | Yeon‐Ju Kim Minji Kang Min‐Hye Lee Ji‐Sue Kang Dong‐Yu Kim |
| author_sort | Yeon‐Ju Kim |
| collection | DOAJ |
| description | Abstract Organic nonvolatile memory devices based on organic field‐effect transistors (OFETs) have attracted attention as promising memory components in flexible organic integrated circuits. OFET‐based organic memories can be fabricated using solution processes with high portability and flexibility. However, many challenges still remain, such as achieving high levels of transparency and data storage while maintaining device reliability. In this study, the high‐performance of flexible organic nonvolatile memory devices is demonstrated through the synergistic effect of using a combination of polymer electret (poly(2‐vinyl naphthalene), PVN) and nanofloating gates (nickel oxide nanoparticles (NiOx NPs)). The PVN/NiOx NPs bilayer successfully acts as a charge storage medium with high transparency in the visible range. This system greatly improves memory performance including high data storage capacity, stable cyclic endurance, and quasi‐permanent retention characteristics (>10 years). Furthermore, these devices also show excellent charge storage characteristics after 1000 bending cycles and even under the sharply bent state (bending radius 3 mm). This enhanced mechanical stability of flexible synergistic memory devices demonstrates that NiOx NPs can play an important role as a reliable data storage material for next‐generation wearable electronic devices. |
| format | Article |
| id | doaj-art-d26ec40fabf34d88b8b56a4682bd7617 |
| institution | Matheson Library |
| issn | 2199-160X |
| language | English |
| publishDate | 2020-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-d26ec40fabf34d88b8b56a4682bd76172025-07-29T18:04:56ZengWiley-VCHAdvanced Electronic Materials2199-160X2020-06-0166n/an/a10.1002/aelm.202000189High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer ElectretYeon‐Ju Kim0Minji Kang1Min‐Hye Lee2Ji‐Sue Kang3Dong‐Yu Kim4Research Institute for Solar and Sustainable Energies (RISE) Heeger Center for Advanced Materials (HCAM) School of Materials Science and Engineering (MSE) Gwangju Institute of Science and Technology (GIST) 123 Cheomdan‐gwagiro Buk‐gu Gwangju 61005 Republic of KoreaResearch Institute for Solar and Sustainable Energies (RISE) Heeger Center for Advanced Materials (HCAM) School of Materials Science and Engineering (MSE) Gwangju Institute of Science and Technology (GIST) 123 Cheomdan‐gwagiro Buk‐gu Gwangju 61005 Republic of KoreaResearch Institute for Solar and Sustainable Energies (RISE) Heeger Center for Advanced Materials (HCAM) School of Materials Science and Engineering (MSE) Gwangju Institute of Science and Technology (GIST) 123 Cheomdan‐gwagiro Buk‐gu Gwangju 61005 Republic of KoreaResearch Institute for Solar and Sustainable Energies (RISE) Heeger Center for Advanced Materials (HCAM) School of Materials Science and Engineering (MSE) Gwangju Institute of Science and Technology (GIST) 123 Cheomdan‐gwagiro Buk‐gu Gwangju 61005 Republic of KoreaResearch Institute for Solar and Sustainable Energies (RISE) Heeger Center for Advanced Materials (HCAM) School of Materials Science and Engineering (MSE) Gwangju Institute of Science and Technology (GIST) 123 Cheomdan‐gwagiro Buk‐gu Gwangju 61005 Republic of KoreaAbstract Organic nonvolatile memory devices based on organic field‐effect transistors (OFETs) have attracted attention as promising memory components in flexible organic integrated circuits. OFET‐based organic memories can be fabricated using solution processes with high portability and flexibility. However, many challenges still remain, such as achieving high levels of transparency and data storage while maintaining device reliability. In this study, the high‐performance of flexible organic nonvolatile memory devices is demonstrated through the synergistic effect of using a combination of polymer electret (poly(2‐vinyl naphthalene), PVN) and nanofloating gates (nickel oxide nanoparticles (NiOx NPs)). The PVN/NiOx NPs bilayer successfully acts as a charge storage medium with high transparency in the visible range. This system greatly improves memory performance including high data storage capacity, stable cyclic endurance, and quasi‐permanent retention characteristics (>10 years). Furthermore, these devices also show excellent charge storage characteristics after 1000 bending cycles and even under the sharply bent state (bending radius 3 mm). This enhanced mechanical stability of flexible synergistic memory devices demonstrates that NiOx NPs can play an important role as a reliable data storage material for next‐generation wearable electronic devices.https://doi.org/10.1002/aelm.202000189nanofloating gatesnickel oxide nanoparticlesorganic field‐effect transistorsorganic nonvolatile memory, polymer electrets |
| spellingShingle | Yeon‐Ju Kim Minji Kang Min‐Hye Lee Ji‐Sue Kang Dong‐Yu Kim High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer Electret Advanced Electronic Materials nanofloating gates nickel oxide nanoparticles organic field‐effect transistors organic nonvolatile memory, polymer electrets |
| title | High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer Electret |
| title_full | High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer Electret |
| title_fullStr | High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer Electret |
| title_full_unstemmed | High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer Electret |
| title_short | High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer Electret |
| title_sort | high performance flexible organic nonvolatile memories with outstanding stability using nickel oxide nanofloating gate and polymer electret |
| topic | nanofloating gates nickel oxide nanoparticles organic field‐effect transistors organic nonvolatile memory, polymer electrets |
| url | https://doi.org/10.1002/aelm.202000189 |
| work_keys_str_mv | AT yeonjukim highperformanceflexibleorganicnonvolatilememorieswithoutstandingstabilityusingnickeloxidenanofloatinggateandpolymerelectret AT minjikang highperformanceflexibleorganicnonvolatilememorieswithoutstandingstabilityusingnickeloxidenanofloatinggateandpolymerelectret AT minhyelee highperformanceflexibleorganicnonvolatilememorieswithoutstandingstabilityusingnickeloxidenanofloatinggateandpolymerelectret AT jisuekang highperformanceflexibleorganicnonvolatilememorieswithoutstandingstabilityusingnickeloxidenanofloatinggateandpolymerelectret AT dongyukim highperformanceflexibleorganicnonvolatilememorieswithoutstandingstabilityusingnickeloxidenanofloatinggateandpolymerelectret |