Transient Analysis of Donor-like Surface Traps in GaN HEMTs
Charge trapping in Gallium Nitride-based devices affect their reliability and performance. In this paper, we study the dynamics of charge capture and emission in donor-like surface traps, and the impact of trapped charges on transient response of the drain current in Gallium Nitride High Electron Mo...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Amirkabir University of Technology
2022-12-01
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| Series: | AUT Journal of Electrical Engineering |
| Subjects: | |
| Online Access: | https://eej.aut.ac.ir/article_4770_e2eead294f3524cf84632e684381afaa.pdf |
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