A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors
In this study, VO2 Mott memristors have been successfully fabricated, leading to the proposal of a passive and scalable high-order neural circuit. This circuit consists of two coupled VO2 Mott memristors, two resistors, and three capacitors. The proposed high-order neural circuit demonstrates 11 dis...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
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| Online Access: | https://ieeexplore.ieee.org/document/11015876/ |
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| author | Zikang Lin Xiaohui Wu Shujing Zhao Weihua Liu Xin Li Li Geng Chuanyu Han |
| author_facet | Zikang Lin Xiaohui Wu Shujing Zhao Weihua Liu Xin Li Li Geng Chuanyu Han |
| author_sort | Zikang Lin |
| collection | DOAJ |
| description | In this study, VO2 Mott memristors have been successfully fabricated, leading to the proposal of a passive and scalable high-order neural circuit. This circuit consists of two coupled VO2 Mott memristors, two resistors, and three capacitors. The proposed high-order neural circuit demonstrates 11 distinct firing behaviors similar to those of biological neurons, along with controllable burst firing patterns. The spikes, interspike interval (ISI) within a burst, and the quiescence interval between bursts can be adjusted by varying the capacitance and resistance values. In addition, this circuit operates without the need for a bias supply or inductors, enhancing its scalability. This design not only improves circuit interconnection but also effectively reduces power consumption, providing a solid foundation for the development of spiking neural networks (SNNs). |
| format | Article |
| id | doaj-art-d06a0a0dba894e678dec6a81434c1cb4 |
| institution | Matheson Library |
| issn | 2329-9231 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| spelling | doaj-art-d06a0a0dba894e678dec6a81434c1cb42025-06-26T23:00:57ZengIEEEIEEE Journal on Exploratory Solid-State Computational Devices and Circuits2329-92312025-01-0111606610.1109/JXCDC.2025.357370911015876A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott MemristorsZikang Lin0https://orcid.org/0009-0006-1381-4742Xiaohui Wu1Shujing Zhao2https://orcid.org/0000-0003-1087-1662Weihua Liu3Xin Li4Li Geng5https://orcid.org/0000-0003-4002-9281Chuanyu Han6https://orcid.org/0000-0002-4732-0429School of Microelectronics, Xi’an Jiaotong University, Xi’an, ChinaSchool of Microelectronics, Xi’an Jiaotong University, Xi’an, ChinaSchool of Microelectronics, Xi’an Jiaotong University, Xi’an, ChinaSchool of Microelectronics, Xi’an Jiaotong University, Xi’an, ChinaSchool of Microelectronics, Xi’an Jiaotong University, Xi’an, ChinaSchool of Microelectronics, Xi’an Jiaotong University, Xi’an, ChinaSchool of Microelectronics, Xi’an Jiaotong University, Xi’an, ChinaIn this study, VO2 Mott memristors have been successfully fabricated, leading to the proposal of a passive and scalable high-order neural circuit. This circuit consists of two coupled VO2 Mott memristors, two resistors, and three capacitors. The proposed high-order neural circuit demonstrates 11 distinct firing behaviors similar to those of biological neurons, along with controllable burst firing patterns. The spikes, interspike interval (ISI) within a burst, and the quiescence interval between bursts can be adjusted by varying the capacitance and resistance values. In addition, this circuit operates without the need for a bias supply or inductors, enhancing its scalability. This design not only improves circuit interconnection but also effectively reduces power consumption, providing a solid foundation for the development of spiking neural networks (SNNs).https://ieeexplore.ieee.org/document/11015876/Bursting firinghigh-order neuronpassive circuitVO2 Mott memristor |
| spellingShingle | Zikang Lin Xiaohui Wu Shujing Zhao Weihua Liu Xin Li Li Geng Chuanyu Han A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Bursting firing high-order neuron passive circuit VO2 Mott memristor |
| title | A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors |
| title_full | A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors |
| title_fullStr | A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors |
| title_full_unstemmed | A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors |
| title_short | A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors |
| title_sort | passive and scalable high order neuromorphic circuit enabled by mott memristors |
| topic | Bursting firing high-order neuron passive circuit VO2 Mott memristor |
| url | https://ieeexplore.ieee.org/document/11015876/ |
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