A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors
In this study, VO2 Mott memristors have been successfully fabricated, leading to the proposal of a passive and scalable high-order neural circuit. This circuit consists of two coupled VO2 Mott memristors, two resistors, and three capacitors. The proposed high-order neural circuit demonstrates 11 dis...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11015876/ |
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| Summary: | In this study, VO2 Mott memristors have been successfully fabricated, leading to the proposal of a passive and scalable high-order neural circuit. This circuit consists of two coupled VO2 Mott memristors, two resistors, and three capacitors. The proposed high-order neural circuit demonstrates 11 distinct firing behaviors similar to those of biological neurons, along with controllable burst firing patterns. The spikes, interspike interval (ISI) within a burst, and the quiescence interval between bursts can be adjusted by varying the capacitance and resistance values. In addition, this circuit operates without the need for a bias supply or inductors, enhancing its scalability. This design not only improves circuit interconnection but also effectively reduces power consumption, providing a solid foundation for the development of spiking neural networks (SNNs). |
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| ISSN: | 2329-9231 |