Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit
A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated la...
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| Format: | Article |
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IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/7954576/ |
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| author | Sulakshna Kumari Johan Gustavsson Emanuel P. Haglund Jorgen Bengtsson Anders Larsson Gunther Roelkens Roel Baets |
| author_facet | Sulakshna Kumari Johan Gustavsson Emanuel P. Haglund Jorgen Bengtsson Anders Larsson Gunther Roelkens Roel Baets |
| author_sort | Sulakshna Kumari |
| collection | DOAJ |
| description | A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated laser to both set the polarization state of the resonant optical field and to enable output coupling to a SiN waveguide with high efficiency. The numerical simulations predict that for apertures of 4 and 6-<inline-formula><tex-math notation="LaTeX">$\mu\text{m}$</tex-math> </inline-formula> oxide-confined VCSILs operating at 845-nm wavelength, a slope efficiency for the light coupled to the waveguide of 0.18 and 0.22 mW/mA is achievable, respectively, while maintaining a low threshold gain of 583 and 589 cm <sup>−1</sup>, respectively, for the lasing. |
| format | Article |
| id | doaj-art-cde29f5f62914a679d1f2d2c95787be0 |
| institution | Matheson Library |
| issn | 1943-0655 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-cde29f5f62914a679d1f2d2c95787be02025-07-01T23:28:20ZengIEEEIEEE Photonics Journal1943-06552017-01-01941910.1109/JPHOT.2017.27173807954576Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide CircuitSulakshna Kumari0Johan Gustavsson1Emanuel P. Haglund2Jorgen Bengtsson3Anders Larsson4Gunther Roelkens5Roel Baets6Photonics Research Group, imec, Ghent University, Ghent, BelgiumPhotonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SwedenPhotonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SwedenPhotonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SwedenPhotonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SwedenPhotonics Research Group, imec, Ghent University, Ghent, BelgiumPhotonics Research Group, imec, Ghent University, Ghent, BelgiumA short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated laser to both set the polarization state of the resonant optical field and to enable output coupling to a SiN waveguide with high efficiency. The numerical simulations predict that for apertures of 4 and 6-<inline-formula><tex-math notation="LaTeX">$\mu\text{m}$</tex-math> </inline-formula> oxide-confined VCSILs operating at 845-nm wavelength, a slope efficiency for the light coupled to the waveguide of 0.18 and 0.22 mW/mA is achievable, respectively, while maintaining a low threshold gain of 583 and 589 cm <sup>−1</sup>, respectively, for the lasing.https://ieeexplore.ieee.org/document/7954576/Waveguidegratingssilicon nanophotonicssemiconductor lasers. |
| spellingShingle | Sulakshna Kumari Johan Gustavsson Emanuel P. Haglund Jorgen Bengtsson Anders Larsson Gunther Roelkens Roel Baets Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit IEEE Photonics Journal Waveguide gratings silicon nanophotonics semiconductor lasers. |
| title | Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit |
| title_full | Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit |
| title_fullStr | Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit |
| title_full_unstemmed | Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit |
| title_short | Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit |
| title_sort | design of an 845 nm gaas vertical cavity silicon integrated laser with an intracavity grating for coupling to a sin waveguide circuit |
| topic | Waveguide gratings silicon nanophotonics semiconductor lasers. |
| url | https://ieeexplore.ieee.org/document/7954576/ |
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