Impact of Reset Pulse Width on Gradual Conductance Programming in Al<sub>2</sub>O<sub>3</sub>/TiO<sub>x</sub>-Based RRAM

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Impact of Reset Pulse Width on Gradual Conductance Programming in Al<sub>2</sub>O<sub>3</sub>/TiO<sub>x</sub>-Based RRAM

This work investigates the impact of reset pulse width on multilevel conductance programming in Al<sub>2</sub>O<sub>3</sub>/TiO<sub>x</sub>-based resistive random access memory. A 32 × 32 cross-point array of Ti (12 nm)/Pt (62 nm)/Al<sub>2</sub>O<su...

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Bibliographic Details
Main Authors:	Hyeonseong Lim, Wonbo Shim, Tae-Hyeon Kim
Format:	Article
Language:	English
Published:	MDPI AG 2025-06-01
Series:	Micromachines
Subjects:	resistive random access memory (RRAM) resistive switching incremental step pulse programming (ISPP)
Online Access:	https://www.mdpi.com/2072-666X/16/6/718
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