APA (7th ed.) Citation

Zhang, Y., Chen, C., Hsiao, P., Li, B., & Nguyen, V. (2025). Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations. MDPI AG.

Chicago Style (17th ed.) Citation

Zhang, Yao-Zhong, Chiung-An Chen, Powen Hsiao, Bo-Yi Li, and Van-Khang Nguyen. Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations. MDPI AG, 2025.

MLA (9th ed.) Citation

Zhang, Yao-Zhong, et al. Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations. MDPI AG, 2025.