Ultra-Sensitive PIN-Photodiode Receiver
A monolithically integrated receiver consisting of a low-capacitance PIN photodiode and a photo-charge integrating amplifier in 0.18-<italic>μ</italic>m CMOS is introduced launching a new class of ultra-sensitive optical receivers. The integrated PIN photodiode has a junction...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10135079/ |
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| Summary: | A monolithically integrated receiver consisting of a low-capacitance PIN photodiode and a photo-charge integrating amplifier in 0.18-<italic>μ</italic>m CMOS is introduced launching a new class of ultra-sensitive optical receivers. The integrated PIN photodiode has a junction capacitance of 1.5 fF at a light-sensitive diameter of 30 <italic>μ</italic>m, a responsivity of 0.39 A/W at 635 nm, and rise/fall times of 0.73/0.92 ns at a reverse bias of 20 V. The common-source amplifier integrates the photo-charges on the smallest possible integration capacitor, which is a gate-drain overlap capacitance. The data bits are reconstructed by double sampling. In such a way, the sensitivity of SPAD receivers is achieved, however without using any impact ionization. At 50 Mb/s, a sensitivity of −56.4 dBm for a bit error ratio (BER) of 2 × 10<sup>−3</sup> is obtained using a wavelength of 635 nm. |
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| ISSN: | 1943-0655 |