Impact Produced by Recrystallization of Mechanically Destroyed Layer on Planar Side of Silicon Wafer Upon Electrical Parameters of CMOS Microcircuits

Impact Produced by Recrystallization of Mechanically Destroyed Layer on Planar Side of Silicon Wafer Upon Electrical Parameters of CMOS Microcircuits

The influence of recrystallization of a mechanically damaged layer on the working side of a silicon wafer using rapid heat treatment (1000 °C, 20 s) on the electrical parameters of complementary metal-oxide-semiconductor microcircuits has been established. The analyzed characteristics of  n- and  p-...

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Bibliographic Details
Main Authors: U. A. Pilipenka, V. A. Saladukha, H. A. Siarheichyk, D. U. Shestouski
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2024-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
rapid thermal treatment
gate dielectric
fixed charge in dielectric
voltage current characteristics
n- and p-channel metal-oxide-semiconductor transistors
Online Access:https://doklady.bsuir.by/jour/article/view/3927
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